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    INFRARED DETECTING WITH MULTIPLE ABSORBERS IN A SENSING ELEMENT
    1.
    发明申请
    INFRARED DETECTING WITH MULTIPLE ABSORBERS IN A SENSING ELEMENT 有权

    公开(公告)号：US20220163397A1

    公开(公告)日：2022-05-26

    申请号：US16953438

    申请日：2020-11-20

    Applicant: Raytheon Company

    Inventor： David R. Rhiger ,  Edward P. Smith ,  Jamal I. Mustafa

    IPC: G01J5/08

    Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.

    Focal plane array detectors with selectable polarization
    5.
    发明授权
    Focal plane array detectors with selectable polarization 有权

    公开(公告)号：US11374050B2

    公开(公告)日：2022-06-28

    申请号：US16940310

    申请日：2020-07-27

    Applicant: Raytheon Company

    Inventor： Michael J. Batinica ,  Bradly Eachus ,  Edward P. Smith

    IPC: H04N5/369 ,  H04N5/351 ,  H04N5/378 ,  H01L27/146

    Abstract: A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.

    TWO COLOR DETECTOR LEVERAGING RESONANT CAVITY ENHANCEMENT FOR PERFORMANCE IMPROVEMENT
    6.
    发明申请
    TWO COLOR DETECTOR LEVERAGING RESONANT CAVITY ENHANCEMENT FOR PERFORMANCE IMPROVEMENT 有权
    两色检测器提升谐波增强性能改进

    公开(公告)号：US20150137295A1

    公开(公告)日：2015-05-21

    申请号：US14084276

    申请日：2013-11-19

    Applicant: RAYTHEON COMPANY

    Inventor： Justin Gordon Adams Wehner ,  Edward P. Smith ,  Stephanie Bostwick

    IPC: H01L27/146

    CPC classification number: H01L27/14629 ,  H01L27/14669 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/1013 ,  H01L31/109 ,  Y02E10/544

    Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).

    Abstract translation: 用于提供单色或多色光电探测器的方法和结构，利用腔谐振获得性能优势。 在一个示例中，辐射检测器（110）包括具有第一导电类型的半导体吸收层（210,410A，410B，610,810,1010,1030,1210,1230）以及响应于第一导电类型中的辐射的能带隙 耦合到所述吸收层（210,410A，41013,610,810,1010,1030,1210,1230）并且具有第二导电类型的半导体集电极层（220,630,830,1020,1040） 以及耦合到所述集电极层（220,630,820,1020,1040）并且具有第一反射镜（240）和第二反射镜（245）的谐振腔。

    Infrared photodetector architectures for high temperature operations
    7.
    发明授权
    Infrared photodetector architectures for high temperature operations 有权

    公开(公告)号：US11588068B2

    公开(公告)日：2023-02-21

    申请号：US17100041

    申请日：2020-11-20

    Applicant: Raytheon Company

    Inventor： Jamal Mustafa ,  Edward P. Smith ,  Bradly Eachus

    IPC: H01L31/11 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/18

    Abstract: A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.

    REDUCED JUNCTION AREA BARRIER-BASED PHOTODETECTOR
    10.
    发明申请
    REDUCED JUNCTION AREA BARRIER-BASED PHOTODETECTOR 有权
    减少接线面积基于光栅的照相机

    公开(公告)号：US20150263204A1

    公开(公告)日：2015-09-17

    申请号：US14630046

    申请日：2015-02-24

    Applicant: RAYTHEON COMPANY

    Inventor： Edward P. Smith ,  Borys P. Kolasa ,  Paul M. Alcorn

    IPC: H01L31/0352 ,  H01L31/103 ,  H01L31/18

    CPC classification number: H01L31/0352 ,  H01L31/09 ,  H01L31/101

    Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

    Abstract translation: 一种光电检测器结构，其具有设置在一对类似导电掺杂的半导体层之间的阻挡层，所述势垒层的表面积小于所述一对半导体层的上部表面积的表面积。 填充材料设置在阻挡层的外围边缘与第一和第二层的外围边缘之间的区域之间。

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