公开(公告)号：US20210233841A1

公开(公告)日：2021-07-29

申请号：US16752925

申请日：2020-01-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shunji KUBO ,  Kazuki NIINO ,  Hajime HAYASHIMOTO

IPC: H01L23/522 ,  H01L23/528

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, an insulating film, a conductive film, a first electrode pad, a second electrode pad, and a third electrode pad. The semiconductor layer includes a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type opposite to the first conductivity type. The insulating film is formed on the semiconductor layer. The conductive film is formed on the second semiconductor region through the insulating film interposed therebetween. The first electrode pad is configured to be electrically connected with the first semiconductor region and is configured to be electrically connected with the power supply circuit. The second electrode pad is configured to be electrically connected with the second semiconductor region and is configured to allow a signal to be provided toward an external circuit through the second electrode pad.