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公开(公告)号:US20210233841A1
公开(公告)日:2021-07-29
申请号:US16752925
申请日:2020-01-27
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor: Shunji KUBO , Kazuki NIINO , Hajime HAYASHIMOTO
IPC: H01L23/522 , H01L23/528
Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, an insulating film, a conductive film, a first electrode pad, a second electrode pad, and a third electrode pad. The semiconductor layer includes a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type opposite to the first conductivity type. The insulating film is formed on the semiconductor layer. The conductive film is formed on the second semiconductor region through the insulating film interposed therebetween. The first electrode pad is configured to be electrically connected with the first semiconductor region and is configured to be electrically connected with the power supply circuit. The second electrode pad is configured to be electrically connected with the second semiconductor region and is configured to allow a signal to be provided toward an external circuit through the second electrode pad.
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公开(公告)号:US20230134000A1
公开(公告)日:2023-05-04
申请号:US17887094
申请日:2022-08-12
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor: Hiroaki SEKIKAWA , Yasutaka NAKASHIBA , Hideki SASAKI , Hajime HAYASHIMOTO
IPC: H01L23/495 , H01L23/31 , H01L21/48 , H01L21/56
Abstract: Reliability of a semiconductor device is improved. The semiconductor device includes a clip which is electrically connected to a main-transistor source pad via a first silver paste and is connected to a lead via a second silver paste. The clip has a “first part” with which the first silver paste is in contact, a “second part” with which the second silver paste is in contact, and a “third part” positioned between the “first part” and the “second part”. A protruding member is formed on a surface of the main-transistor source pad, and the “first part” is in contact with the protruding member.
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