公开(公告)号：US20180315722A1

公开(公告)日：2018-11-01

申请号：US15937028

申请日：2018-03-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Akira YAJIMA ,  Yoshiaki YAMADA

IPC: H01L23/00 ,  H01L21/66 ,  G11C29/50

Abstract: A barrier layer BAL is formed so as to be in contact with an aluminum pad ALP. A titanium alloy layer including a titanium film and a titanium nitride film is formed as barrier layer BAL. A seed layer SED is formed so as to be in contact with barrier layer BAL. A copper film is formed as seed layer SED. A silver bump AGBP is formed so as to be in contact with seed layer SED. Silver bump AGBP is constructed with a silver film AGPL formed by an electrolytic plating method. A tin alloy ball SNB is bonded to silver bump AGBP.