公开(公告)号：US20140318593A1

公开(公告)日：2014-10-30

申请号：US14359817

申请日：2012-11-21

Applicant: RESEARCH TRIANGLE INSTITUTE ,  NORTH CAROLINA STATE UNIVERSITY

Inventor： Rama Venkatasubramanian ,  Judy Stuart ,  Ryan Wiitala ,  Peter Thomas ,  Carl C. Koch ,  Tsungta Ethan Chan

IPC: H01L35/16 ,  H01L35/18 ,  H01L35/28

CPC classification number: H01L35/16 ,  H01L35/18 ,  H01L35/28 ,  Y10T428/268

Abstract: A thermoelectric composite and a thermoelectric device and a method of making the thermoelectric composite. The thermoelectric composite is a semiconductor material formed from mechanically-alloyed powders of elemental constituents of the semiconductor material to produce nano-particles of the semiconductor material, and compacted to have at least a bifurcated grain structure. The bifurcated grain structure has at least two different grain sizes including small size grains in a range of 2-200 nm and large size grains in a range of 0.5 to 5 microns. The semiconductor material has a figure of merit ZT, defined as a ratio of the product of square of Seebeck coefficient, S2, and electrical conductivity σ divided by the thermal conductivity k, which varies from greater than 1 at 300 K to 2.5 at temperatures of 300 to 500K.

Abstract translation: 热电复合材料和热电元件以及制造热电复合材料的方法。 热电复合体是由半导体材料的元素成分的机械合金化粉末形成的半导体材料，以制造半导体材料的纳米颗粒，并且被压制成具有至少一个分叉的晶粒结构。 分叉晶粒结构具有至少两种不同的晶粒尺寸，包括在2-200nm范围内的小尺寸晶粒和0.5至5微米范围内的大尺寸晶粒。 半导体材料具有品质因数ZT，定义为塞贝克系数的平方乘积，S2和电导率的乘积比; 除以热导率k，其在300至500K的温度下在300K下从大于1变化至2.5。

公开(公告)号：US09437796B2

公开(公告)日：2016-09-06

申请号：US13725156

申请日：2012-12-21

Applicant: RESEARCH TRIANGLE INSTITUTE

Inventor： Rama Venkatasubramanian ,  Bruce Allen Cook ,  Evgenii M. Levin ,  Joel Lee Harringa

IPC: H01L35/14 ,  H01L35/16 ,  C22C1/02 ,  C22C28/00 ,  H01F1/40

CPC classification number: H01L35/16 ,  C22C1/02 ,  C22C28/00 ,  H01F1/401

Abstract: A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

Abstract translation: 使用这种材料的热电材料和热电转换器。 热电材料具有包括半导体材料的第一部件和包括在第一部件中的稀土材料的第二部件，从而相对于品质因数增加半导体材料和稀土材料的复合材料的品质因数 的半导体材料。 热电转换器具有p型热电材料和n型热电材料。 p型热电材料和n型热电材料中的至少一种在p型热电材料或n型热电材料中的至少一种中包括稀土材料。