公开(公告)号：US20240132739A1

公开(公告)日：2024-04-25

申请号：US18479782

申请日：2023-10-02

申请人： Meta Platforms Technologies, LLC

发明人： Omar Awartani ,  Marcos Antonio Santana Andrade, JR. ,  Wenyang Pan ,  Kristopher Erickson ,  Thomas John Farrell Wallin

IPC分类号： C09D11/54 ,  C22C28/00 ,  H05K1/02

CPC分类号： C09D11/54 ,  C22C28/00 ,  H05K1/028

摘要： An optimized solvent-based liquid metal composition includes a solution and a liquid metal mixed with the solution. The solution includes at least one solvent and a polymeric binder dissolved in the at least one solvent. Additionally or optionally, the composition includes a metallic filler. The ingredients of the composition are tailored to extend decap time while maintaining other beneficial properties to permit the use of the composition in various printing techniques.

公开(公告)号：US11897034B2

公开(公告)日：2024-02-13

申请号：US16975838

申请日：2018-09-13

申请人： STAR GROUP IND. CO., LTD

发明人： Dong Hwan Kim ,  Koon Seung Kong

IPC分类号： B22F3/16 ,  B22F3/24 ,  B22F9/04 ,  C22C28/00 ,  H01F1/057 ,  H01F41/02

CPC分类号： B22F3/16 ,  B22F3/24 ,  B22F9/04 ,  C22C28/00 ,  H01F1/0571 ,  H01F41/0266 ,  B22F2003/248 ,  B22F2009/044 ,  B22F2202/05 ,  B22F2301/45 ,  C22C2202/02

摘要： There is provided a method for manufacturing a rare earth sintered magnet by many times repetitively finely pulverizing a rare earth alloy on a jet mill by supplying high-pressure nitrogen gas to narrow grain size distribution to make an easy alignment in a magnetic field, and by micronizing crystal grains by using a hydrogenation-disproportionation-desorption-recombination (HDDR) process, to improve the coercivity and thermostability of the rare earth sintered magnet.

公开(公告)号：US20240033822A1

公开(公告)日：2024-02-01

申请号：US18022246

申请日：2020-12-08

申请人： Yuanyun ZHAO

发明人： Yuanyun ZHAO ,  Li LIU

IPC分类号： B22F9/08 ,  C22C1/02 ,  B22F1/142 ,  C22C18/00 ,  B22F1/054 ,  C22C27/06 ,  B22F1/145 ,  C22C27/02 ,  C22C19/03 ,  C22C30/00 ,  B22F1/05 ,  C22C14/00 ,  C22C33/04 ,  C22C38/28 ,  C22C38/00 ,  C22C38/22 ,  C22C28/00 ,  C22C11/04 ,  C22C9/10

CPC分类号： B22F9/082 ,  C22C1/02 ,  B22F1/142 ,  C22C18/00 ,  B22F1/056 ,  C22C27/06 ,  B22F1/145 ,  C22C27/02 ,  C22C19/03 ,  C22C30/00 ,  B22F1/05 ,  C22C14/00 ,  C22C33/04 ,  C22C38/28 ,  C22C38/005 ,  C22C38/22 ,  C22C28/00 ,  C22C11/04 ,  C22C9/10 ,  B22F2999/00 ,  B22F2998/10 ,  B22F2301/30 ,  B22F2304/054 ,  B22F2201/20 ,  B22F2301/20 ,  B22F2301/15 ,  B22F2304/10 ,  B22F2301/205 ,  B22F2301/35 ,  B22F2301/10

摘要： The present disclosure provides a method for preparing a high-purity powder material, an application thereof, and a double-phase powder material. The high-purity powder material is prepared through an “atomization comminuting process and de-phasing method”. The preparation method comprises the following steps: firstly preparing intermediate alloy powders with first-phase particles wrapped by a second-phase matrix through an atomization comminuting process. Impurity elements are enriched into the second-phase matrix and the first-phase particles are purified during the solidification of the intermediate alloy powders; By removing the second-phase matrix in the intermediate alloy powders, a high-purity target powder material originated from the original first-phase particles can be obtained. The preparation method of the present disclosure has the characteristics of a simple process, easy operation, and low cost, and can be used to prepare nano-level, sub-micron-level, and micro-level multiple high-purity powder materials, which has a good application prospect in catalytic materials, powder metallurgy

公开(公告)号：US11839158B2

公开(公告)日：2023-12-05

申请号：US17422953

申请日：2020-01-15

申请人： TOSOH CORPORATION

发明人： Yoichiro Koda ,  Ryo Akiike ,  Hideto Kuramochi

IPC分类号： C22C28/00 ,  H10N10/855 ,  C22C1/04 ,  B22F3/14

CPC分类号： H10N10/855 ,  C22C1/04 ,  C22C28/00 ,  B22F3/14 ,  B22F2201/02 ,  B22F2201/11

摘要： Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.
Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:

45 atm %≤Si/(Ru+Si)≤70 atm %

30 atm %≤Ru/(Ru+Si)≤55 atm %.

公开(公告)号：US11832519B2

公开(公告)日：2023-11-28

申请号：US17637805

申请日：2020-09-16

申请人： Sumitomo Electric Industries, Ltd. ,  Toyota School Foundation

发明人： Kotaro Hirose ,  Masahiro Adachi ,  Tsunehiro Takeuchi

IPC分类号： H10N10/851 ,  C22C28/00 ,  C22C45/00 ,  H10N10/857

CPC分类号： H10N10/851 ,  C22C28/00 ,  C22C45/00 ,  H10N10/857 ,  C22C2200/02

摘要： A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

公开(公告)号：US11793077B2

公开(公告)日：2023-10-17

申请号：US17422953

申请日：2020-01-15

申请人： TOSOH CORPORATION

发明人： Yoichiro Koda ,  Ryo Akiike ,  Hideto Kuramochi

IPC分类号： C22C28/00 ,  H10N10/855 ,  C22C1/04 ,  B22F3/14

CPC分类号： H10N10/855 ,  C22C1/04 ,  C22C28/00 ,  B22F3/14 ,  B22F2201/02 ,  B22F2201/11

摘要： Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.
Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:

45 atm %≤Si/(Ru+Si)≤70 atm %

30 atm %≤Ru/(Ru+Si)≤55 atm %.

公开(公告)号：US11773471B2

公开(公告)日：2023-10-03

申请号：US17502068

申请日：2021-10-15

申请人： Hamilton Sundstrand Corporation

发明人： Eric Karlen ,  William Louis Wentland ,  Sergey Mironets ,  Robert Bianco

IPC分类号： B22F10/20 ,  C22C21/00 ,  B22F1/00 ,  B33Y70/00 ,  B33Y10/00 ,  B22F9/04 ,  C22C28/00 ,  B22F10/28 ,  B22F12/44 ,  B22F10/32 ,  B22F10/64

CPC分类号： C22C21/00 ,  B22F1/00 ,  B22F9/04 ,  B22F10/28 ,  B33Y10/00 ,  B33Y70/00 ,  C22C28/00 ,  B22F10/32 ,  B22F10/64 ,  B22F12/44

摘要： An aluminum alloy comprising greater than 2.00 and less than 4.00 wt. % cerium, 0.25-3.00 wt. % silicon, 0.25-0.75 wt. % magnesium, 0-0.75 wt. % iron, 0-0.05 wt. % other alloying elements, and the balance of aluminum, based on the total weight of the aluminum alloy aluminum alloy.

公开(公告)号：US20230302530A1

公开(公告)日：2023-09-28

申请号：US18118944

申请日：2023-03-08

申请人： Drexel University

发明人： Gongyao Zhou ,  Yifan Fei ,  Jie Xu

IPC分类号： B22D23/00 ,  C22C1/02 ,  C22C28/00 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y40/10

CPC分类号： B22D23/003 ,  B33Y10/00 ,  B33Y40/10 ,  B33Y70/00 ,  C22C1/02 ,  C22C28/00

摘要： A device and method of thixotropic mixing and 3D printing of alloys is provided. The method includes the steps of locating a thixotropic mixer having a discharge nozzle above a substrate; adding a molten alloy to the mixer; locating the nozzle between about 1 mm and about 20 mm from the substrate; and extruding the alloy from the nozzle onto the substrate.

公开(公告)号：US11673214B2

公开(公告)日：2023-06-13

申请号：US17664907

申请日：2022-05-25

申请人： Uchihashi Estec Co., Ltd.

发明人： Yoshihiro Yoshioka ,  Kazuo Inada ,  Tomokuni Mitsui ,  Hitoshi Yamanaka

IPC分类号： B23K35/26 ,  C22C28/00

CPC分类号： B23K35/26 ,  C22C28/00

摘要： A lead-free solder contains 93.0 mass % or more and 98.95 mass % or less of indium, 1.0 mass % or more and 4.0 mass % or less of tin, and an addition metal. The addition metal contains at least one of silver, antimony, copper, or nickel. The addition metal is neither indium nor tin. The total of mass percentage of the addition metal is 0.05 mass % or more and 6.0 mass % or less. The sum of the total mass percentage of the addition metal, the mass percentage of indium, and the mass percentage of tin is 100 mass % or less.

公开(公告)号：US20230142030A1

公开(公告)日：2023-05-11

申请号：US17982306

申请日：2022-11-07

申请人： INDIUM CORPORATION

发明人： Guangyu Fan

IPC分类号： H01L23/473 ,  H01L23/373 ,  C22C28/00

CPC分类号： H01L23/473 ,  H01L23/3736 ,  H01L23/3737 ,  C22C28/00

摘要： Some implementations of the disclosure are directed to liquid metal composites that can be used as thermal interface materials. In one implementation, a liquid metal composite configured to be applied as a thermal interface material between electronic components, includes: 90 wt % to 99.9 wt % of a liquid metal or liquid metal alloy; and 0.1 wt % to 10 wt % of at least one organic additive comprising an organic compound to prevent oxidation of the liquid metal or liquid metal alloy during application of the liquid metal composite on a surface of an electronic component.