公开(公告)号：US20130140678A1

公开(公告)日：2013-06-06

申请号：US13749803

申请日：2013-01-25

Applicant: RF Micro Devices, Inc.

Inventor： Sangchae Kim ,  Tony Ivanov ,  Julio Costa

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81C1/0015 ,  H01L27/101 ,  H03H3/0072 ,  H03H9/02433 ,  H03H9/2405

Abstract: The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Abstract translation: 本发明涉及在半导体管芯的两个金属层之间使用绝缘体层来提供诸如欧姆MEMS开关或电容式MEMS开关的微机电系统（MEMS）器件。 在欧姆MEMS开关中，绝缘体层可用于在制造过程中减少金属底切，以防止MEMS致动器对MEMS悬臂的电短路，或两者兼而有之。 在电容MEMS开关中，绝缘体层可以用作由两个金属层提供的电容板之间的电容电介质。 固定的电容元件可以由两个金属层之间的绝缘体层提供。 在本发明的一个实施例中，欧姆MEMS开关，电容MEMS开关，固定电容元件或其任何组合可以集成到单个半导体管芯中。