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公开(公告)号：US20190383670A1
公开(公告)日：2019-12-19
申请号：US16437371
申请日：2019-06-11
Applicant: ROLLS-ROYCE plc
Inventor： Mohamed H. M. SATHIK , Rejeki SIMANJORANG , Chandana J. GAJANAYAKE , Sundararajan PRASANTH , Amit K. GUPTA
Abstract: A system, method and machine-readable instructions for monitoring a power electronics device. The system involves a semiconductor device, at least one sensor and a processor. The processor is configured to monitor a junction temperature of the semiconductor device by determining from the at least one sensor an on-state resistance of the semiconductor device and calculating the junction temperature of the semiconductor device according to a relationship between the on-state resistance of the semiconductor device and the junction temperature of the semiconductor device. The processor may apply an ageing coefficient to the on-state resistance.
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公开(公告)号：US20200241067A1
公开(公告)日：2020-07-30
申请号：US16750235
申请日：2020-01-23
Applicant: ROLLS-ROYCE plc
Inventor： Mohamed Sathik MOHAMED HALICK , Chandana J GAJANAYAKE , Sundararajan PRASANTH , Rejeki SIMANJORANG , Amit K GUPTA
Abstract: An operating condition monitor (100) for monitoring an operating condition of a transistor-based power converter (102), comprising: a sensing apparatus (106) configured to measure a turn-off transient energy of the power converter (102), a processor (108) in communication with the sensing apparatus (106) to receive the measurement of the turn-off transient energy, the processor being configured to: compare the measurement of the turn-off transient energy to a threshold; and issue an event signal based on the comparison to the threshold meeting a comparison criterion. A method (200, 200′) of monitoring an operating state of a transistor-based power converter is also disclosed.
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公开(公告)号：US20170350934A1
公开(公告)日：2017-12-07
申请号：US15596878
申请日：2017-05-16
Applicant: ROLLS-ROYCE plc
Inventor： Mohamed Halick Mohamed SATHIK , Chandana Jayamapathi GAJANAYAKE , Shantha Dharmasiri Gamini JAYASINGHE , Amit Kumar GUPTA , Rejeki SIMANJORANG
CPC classification number: G01R31/2617 , G01R31/2621 , G01R31/2637 , G01R31/327 , G01R31/40 , H02M3/158 , H02M7/217 , H02M7/537
Abstract: A method of monitoring the health of a semiconductor power electronic switch such as an insulated gate bipolar transistor (IGBT) is provided. The method having the steps of: measuring one or more parameters selected from the group consisting of: a rate of change of voltage ( dV dt ) across the switch; a rate of change of current ( di dt ) through the switch, a charge present on a gate of the switch (QG), a peak overshoot voltage (VPO) across the switch, and a peak overshoot or reverse recovery current (IRR) through the switch; and estimating the health of the switch based on the measured parameter(s).
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