摘要:
A method and apparatus (e.g., semiconductor device) for setting voltages (e.g., guardbands) using “in situ,” or on-die, silicon measurements are described. In one embodiment the semiconductor device comprises: a process monitor to measure silicon parameters of the semiconductor device; and a controller coupled to the process monitor to set a voltage for use on at least a portion of the semiconductor device based on silicon process monitor measurements.
摘要:
A method of monitoring the health of a semiconductor power electronic switch such as an insulated gate bipolar transistor (IGBT) is provided. The method having the steps of: measuring one or more parameters selected from the group consisting of: a rate of change of voltage ( dV dt ) across the switch; a rate of change of current ( di dt ) through the switch, a charge present on a gate of the switch (QG), a peak overshoot voltage (VPO) across the switch, and a peak overshoot or reverse recovery current (IRR) through the switch; and estimating the health of the switch based on the measured parameter(s).
摘要:
A stacked semiconductor arrangement is provided. The stacked semiconductor arrangement includes a dynamic pattern generator layer having an electrical component. The arrangement also includes a monitoring layer configured to evaluate electrical performance of the electrical component.
摘要:
A stacked semiconductor arrangement is provided. The stacked semiconductor arrangement includes a dynamic pattern generator layer having an electrical component. The arrangement also includes a monitoring layer configured to evaluate electrical performance of the electrical component.
摘要:
In a semiconductor device, two series connections are arranged to be connected between respective split emitter electrodes and a gate electrode with Zener diode units connected in series to respective resistors, with the cathode sides thereof directed to the gate electrode side. The numbers of the Zener diodes in the Zener diode units in the respective series connections are different between the respective Zener diode units. Thus, a semiconductor device can be provided which is capable of detecting an open failure of a bonding wire regardless of the number of a plurality of the bonding wires connected in parallel, by a simple electrical test to make it possible to reliably sort out a semiconductor device with a wire open failure at an early stage.
摘要:
In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT.
摘要:
To prevent an excessive current from flowing through a device under test. A test apparatus that tests a device under test, comprising a power supply section that generates a power supply voltage to be supplied to the device under test; an inductive load section that is provided in a path leading from the power supply section to the device under test; a first semiconductor switch that is provided in the path leading from the inductive load section to the device under test and is connected in parallel with the device under test; and a control section that turns the first semiconductor switch ON when supply of the power supply voltage to the device under test is stopped.
摘要:
To detect whether energy accumulated in an inductive load section has been discharged. Provided is a test apparatus that tests a device under test, comprising a power supply section that generates a power supply voltage to be supplied to the device under test; an inductive load section that is provided in a path between the power supply section and the device under test; a housing section that houses a substrate that includes at least the inductive load section; and a lock maintaining section that keeps an opening/closing section, which allows an operator to access the substrate within the housing section, in a locked state when a voltage at a predetermined position on the substrate is greater than a set voltage.
摘要:
To prevent an excessive current from flowing through a device under test. A test apparatus that tests a device under test, comprising a power supply section that generates a power supply voltage to be supplied to the device under test; an inductive load section that is provided in a path leading from the power supply section to the device under test; a first semiconductor switch that is provided in the path leading from the inductive load section to the device under test and is connected in parallel with the device under test; and a control section that turns the first semiconductor switch ON when supply of the power supply voltage to the device under test is stopped.
摘要:
An apparatus for measuring component performance including a feed line having an input port and an output port, a first resonator connected to the feed line, a first Josephson junction device connected to the first resonator and to ground, and a second resonator connected to the feed line and to ground.