公开(公告)号：US20060017109A1

公开(公告)日：2006-01-26

申请号：US11201373

申请日：2005-08-10

Applicant: Randy Yach ,  Greg Dix

Inventor： Randy Yach ,  Greg Dix

IPC: H01L23/62

CPC classification number: H01L27/0259

Abstract: A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the input and/or output circuits. The ESD-protection structure is able to absorb high current from these ESD events without snapback that would compromise operation of the higher voltage inputs and/or outputs of the integrated circuit. The ESD-protection structure will conduct when an ESD event occurs at a voltage above a controlled breakdown voltage of an electronic device, e.g., diode, in the ESD protection structure. Conduction of current from an ESD event having a voltage above the electronic device controlled breakdown voltage may be through another electronic device, e.g., transistor, having high current conduction capabilities, in the ESD-protection structure that may be controlled (triggered) by the device (e.g., diode) determining the controlled breakdown voltage (at which the ESD voltage is clamped to a desired value). The high voltage ESD-protection structure may be located substantially under the bond pad and may also include a low capacitance forward diode structure between the bond pad and the ESD clamp circuit.

Abstract translation: 高压ESD保护结构用于通过在可能导致破坏性击穿的电压下进行受控击穿电压来保护连接到集成电路接合焊盘的输入或输出的精细晶体管电路免受破坏性高电压ESD事件的影响 的输入和/或输出电路。 ESD保护结构能够吸收来自这些ESD事件的高电流，而不会产生危及集成电路的较高电压输入和/或输出的操作的快速恢复。 当ESD事件发生在高于ESD保护结构中电子器件（例如二极管）的受控击穿电压的电压时，ESD保护结构将导通。 来自具有高于电子器件受控击穿电压的电压的ESD事件的电流的导通可以通过可由该器件控制（触发）的ESD保护结构中的另一电子器件，例如具有高电流传导能力的晶体管 （例如，二极管）确定受控击穿电压（ESD电压被钳位到期望值）。 高压ESD保护结构可以基本上位于接合焊盘下方，并且还可以包括在接合焊盘和ESD钳位电路之间的低电容正向二极管结构。

公开(公告)号：US20050212052A1

公开(公告)日：2005-09-29

申请号：US10809659

申请日：2004-03-25

Applicant: Randy Yach ,  Greg Dix

Inventor： Randy Yach ,  Greg Dix

IPC: H01L23/62 ,  H01L27/02

CPC classification number: H01L27/0259

Abstract: A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the input and/or output circuits. The ESD-protection structure is able to absorb high current from these ESD events without snapback that would compromise operation of the higher voltage inputs and/or outputs of the integrated circuit. The ESD-protection structure will conduct when an ESD event occurs at a voltage above a controlled breakdown voltage of an electronic device, e.g., diode, in the ESD protection structure. Conduction of current from an ESD event having a voltage above the electronic device controlled breakdown voltage may be through another electronic device, e.g., transistor, having high current conduction capabilities, in the ESD-protection structure that may be controlled (triggered) by the device (e.g., diode) determining the controlled breakdown voltage (at which the ESD voltage is clamped to a desired value). The high voltage ESD-protection structure may be located substantially under the bond pad and may also include a low capacitance forward diode structure between the bond pad and the ESD clamp circuit.

Abstract translation: 高压ESD保护结构用于通过在可能导致破坏性击穿的电压下进行受控击穿电压来保护连接到集成电路接合焊盘的输入或输出的精细晶体管电路免受破坏性高电压ESD事件的影响 的输入和/或输出电路。 ESD保护结构能够吸收来自这些ESD事件的高电流，而不会产生危及集成电路的较高电压输入和/或输出的操作的快速恢复。 当ESD事件发生在高于ESD保护结构中电子器件（例如二极管）的受控击穿电压的电压时，ESD保护结构将导通。 来自具有高于电子器件受控击穿电压的电压的ESD事件的电流的导通可以通过可由该器件控制（触发）的ESD保护结构中的另一电子器件，例如具有高电流传导能力的晶体管 （例如，二极管）确定受控击穿电压（ESD电压被钳位到期望值）。 高压ESD保护结构可以基本上位于接合焊盘下方，并且还可以包括在接合焊盘和ESD钳位电路之间的低电容正向二极管结构。

公开(公告)号：US06987300B2

公开(公告)日：2006-01-17

申请号：US10809659

申请日：2004-03-25

Applicant: Randy L. Yach ,  Greg Dix

Inventor： Randy L. Yach ,  Greg Dix

IPC: H01L23/62

CPC classification number: H01L27/0259

Abstract: A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the input and/or output circuits. The ESD-protection structure is able to absorb high current from these ESD events without snapback that would compromise operation of the higher voltage inputs and/or outputs of the integrated circuit. The ESD-protection structure will conduct when an ESD event occurs at a voltage above a controlled breakdown voltage of an electronic device, e.g., diode, in the ESD protection structure. Conduction of current from an ESD event having a voltage above the electronic device controlled breakdown voltage may be through another electronic device, e.g., transistor, having high current conduction capabilities, in the ESD-protection structure that may be controlled (triggered) by the device (e.g., diode) determining the controlled breakdown voltage (at which the ESD voltage is clamped to a desired value). The high voltage ESD-protection structure may be located substantially under the bond pad and may also include a low capacitance forward diode structure between the bond pad and the ESD clamp circuit.

公开(公告)号：US07170136B2

公开(公告)日：2007-01-30

申请号：US11201373

申请日：2005-08-10

Applicant: Randy L. Yach ,  Greg Dix

Inventor： Randy L. Yach ,  Greg Dix

IPC: H01L23/62

CPC classification number: H01L27/0259

Abstract: A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the input and/or output circuits. The ESD-protection structure is able to absorb high current from these ESD events without snapback that would compromise operation of the higher voltage inputs and/or outputs of the integrated circuit. The ESD-protection structure will conduct when an ESD event occurs at a voltage above a controlled breakdown voltage of an electronic device, e.g., diode, in the ESD protection structure. Conduction of current from an ESD event having a voltage above the electronic device controlled breakdown voltage may be through another electronic device, e.g., transistor, having high current conduction capabilities, in the ESD-protection structure that may be controlled (triggered) by the device (e.g., diode) determining the controlled breakdown voltage (at which the ESD voltage is clamped to a desired value). The high voltage ESD-protection structure may be located substantially under the bond pad and may also include a low capacitance forward diode structure between the bond pad and the ESD clamp circuit.