公开(公告)号：US20180033744A1

公开(公告)日：2018-02-01

申请号：US15219327

申请日：2016-07-26

Applicant: Raytheon Company

Inventor： Fikret Altunkilic ,  Adrian D. Williams ,  Christopher J. MacDonald ,  Kamal Tabatabaie Alavi

IPC: H01L23/64 ,  H01L21/768 ,  H01L21/324 ,  H01L23/58

CPC classification number: H01L23/647 ,  H01L21/28575 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/768 ,  H01L23/585 ,  H01L23/66 ,  H01L27/0605 ,  H01L29/812 ,  H01L2924/1423

Abstract: A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing “dummy” fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of “dummy” fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.

公开(公告)号：US10014266B2

公开(公告)日：2018-07-03

申请号：US15219327

申请日：2016-07-26

Applicant: Raytheon Company

Inventor： Fikret Altunkilic ,  Adrian D. Williams ,  Christopher J. MacDonald ,  Kamal Tabatabaie Alavi

IPC: H01L21/26 ,  H01L23/64 ,  H01L23/58 ,  H01L21/768 ,  H01L21/324

CPC classification number: H01L23/647 ,  H01L21/2686 ,  H01L21/28575 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/768 ,  H01L23/522 ,  H01L23/5225 ,  H01L23/585 ,  H01L23/66 ,  H01L29/812 ,  H01L2223/6616 ,  H01L2924/1423

Abstract: A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing “dummy” fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of “dummy” fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.