公开(公告)号：US12119541B2

公开(公告)日：2024-10-15

申请号：US17848508

申请日：2022-06-24

申请人： InnoLux Corporation

发明人： I-Yin Li ,  Tang-Chin Hung

IPC分类号： H01Q1/22 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66

CPC分类号： H01Q1/2283 ,  H01L23/49838 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6616 ,  H01L2223/6677

摘要： An antenna device is provided. The antenna device includes a first substrate and a second substrate facing the first substrate. The first substrate includes an inner surface and an outer surface opposite the inner surface of the first substrate. The second substrate includes an inner surface and an outer surface opposite the inner surface of the second substrate. The antenna device also includes a die disposed between the first substrate and the second substrate, a redistribution layer disposed between the die and the inner surface of the second substrate, and an antenna unit electrically connected to the die via the redistribution layer. The antenna unit is arranged on at least one of the inner surface of the first substrate, the outer surface of the first substrate, the inner surface of the second substrate, and the outer surface of the second substrate.

公开(公告)号：US20240321664A1

公开(公告)日：2024-09-26

申请号：US18190047

申请日：2023-03-24

申请人： JCET STATS ChipPAC Korea Limited

发明人： YeJin Park ,  SeungHyun Lee ,  HeeSoo Lee

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/66

CPC分类号： H01L23/3135 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49827 ,  H01L23/66 ,  H01L24/13 ,  H01L2223/6616 ,  H01L2224/32225 ,  H01L2924/1421 ,  H01L2924/1811 ,  H01L2924/182

摘要： A semiconductor device has a substrate including an antenna formed in a first area of the substrate. An electrical component is disposed over a second area of the substrate. An interconnect structure is disposed over a third area of the substrate. A first encapsulant is deposited over the electrical component and interconnect structure. A second encapsulant is disposed over the antenna. The second encapsulant includes a higher dielectric constant than the first encapsulant.

公开(公告)号：US12095494B1

公开(公告)日：2024-09-17

申请号：US17885554

申请日：2022-08-11

申请人： Marvell Asia Pte Ltd

发明人： Aatreya Chakravarti ,  Wolfgang Sauter ,  Mark William Kuemerle ,  Eric William Tremble

IPC分类号： H04K1/10 ,  H01L23/538 ,  H01L23/66 ,  H04B1/40 ,  H04L27/28

CPC分类号： H04B1/40 ,  H01L23/5384 ,  H01L23/66 ,  H01L2223/6616

摘要： An electronic network device includes: (i) an integrated circuit (IC) die configured to exchange signals between the electronic network device and one or more other devices that are remote from the electronic network device, (ii) a plurality of transceiver dies, separate from the IC die, the plurality of transceiver dies being disposed along at least a first axis extending at an acute angle from an edge of the IC die and intersecting the edge at a first point, the transceiver dies being configured to exchange the signals between the IC die and the other devices, and (iii) electrical connections configured to connect between the IC die and at least one of the transceiver dies for exchanging at least some of the signals between the IC die and the transceiver dies.

公开(公告)号：US12087713B2

公开(公告)日：2024-09-10

申请号：US18148982

申请日：2022-12-30

申请人： Analog Devices, Inc.

发明人： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC分类号： H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

CPC分类号： H01L23/66 ,  H01L21/28575 ,  H01L21/8252 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L23/53214 ,  H01L29/4175 ,  H01L2223/6616 ,  H01L2223/6683 ,  H01L2924/1423

摘要： Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20240282654A1

公开(公告)日：2024-08-22

申请号：US18637489

申请日：2024-04-17

申请人： NXP USA, Inc.

发明人： Elie A. Maalouf ,  Eduard Jan Pabst

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/367 ,  H01L23/373 ,  H01L23/48 ,  H01L23/528 ,  H01L23/538 ,  H01L23/66 ,  H01L25/07 ,  H03F1/02 ,  H03F1/30 ,  H03F3/21

CPC分类号： H01L23/3121 ,  H01L21/56 ,  H01L23/3675 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L24/81 ,  H01L25/072 ,  H03F1/0288 ,  H03F1/301 ,  H03F3/21 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2224/16227 ,  H01L2224/8112 ,  H01L2224/81815 ,  H03F2200/451

摘要： A power amplifier module includes a module substrate, a power transistor die, and a heat spreader. The module substrate has first, second, and third module pads exposed at a mounting surface. The power transistor die has an input/output surface that faces the mounting surface, an opposed ground surface, an input pad electrically coupled to the first module pad, an output pad electrically coupled to the second module pad, and an integrated power transistor. In an embodiment, the power transistor is a field effect transistor with a gate terminal coupled to the input pad, a drain terminal coupled to the output pad, and a source terminal coupled to the ground surface. The heat spreader has a thermal contact surface that is physically and electrically coupled to the ground surface of the power transistor die. An electrical ground contact structure is connected between the thermal contact surface and the third module pad.

公开(公告)号：US12046523B2

公开(公告)日：2024-07-23

申请号：US16681539

申请日：2019-11-12

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/16 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  H01L25/00 ,  H01L25/16 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L23/16 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/66 ,  H01L25/16 ,  H01L25/50 ,  H01L21/6835 ,  H01L24/16 ,  H01L2223/6616 ,  H01L2224/16225 ,  H01L2924/3511

摘要： A semiconductor device package includes a substrate; an electronic component disposed on the substrate; multiple supporting structures disposed on the substrate; and a reinforced structure disposed on the supporting structures and extending in parallel with the substrate.

公开(公告)号：US20240234337A1

公开(公告)日：2024-07-11

申请号：US18415656

申请日：2024-01-18

申请人： VANCHIP (TIANJIN) TECHNOLOGY CO., LTD.

发明人： Ying YU ,  Yunfang BAI

IPC分类号： H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/66 ,  H01L25/065

CPC分类号： H01L23/552 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/66 ,  H01L25/0655 ,  H01L2223/6611 ,  H01L2223/6616

摘要： Disclosed in the present invention are an electromagnetic shielding structure, a manufacturing method and a communication terminal. The electromagnetic shielding structure comprises a module substrate, which is formed with a plurality of grounding holes penetrating through the module substrate, and the plurality of grounding holes jointly define a mounting area; a device to be shielded, which is attached to the module substrate and located in the mounting area; a plurality of grounding bonding pads, which are respectively arranged in the grounding holes in a penetrating manner; and a plurality of wires, wherein the two ends of each wire are respectively connected to two different grounding bonding pads, such that the plurality of wires jointly form a shielding layer erected above the device to be shielded.

公开(公告)号：US20240213188A1

公开(公告)日：2024-06-27

申请号：US18542393

申请日：2023-12-15

申请人： ANALOG DEVICES, INC.

发明人： Santosh Anil Kudtarkar ,  Arun Raj ,  Sharad Vidyarthy ,  Thomas M. Goida

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L23/367 ,  H01L23/498

CPC分类号： H01L23/66 ,  H01L23/3675 ,  H01L23/49816 ,  H01L24/08 ,  H01L24/16 ,  H01L2223/6616 ,  H01L2224/08146 ,  H01L2224/08235 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1421 ,  H01L2924/15311 ,  H01L2924/182

摘要： An integrated device package may include a glass interposer having one or more conductive vias extending through the glass interposer from a top side of the glass interposer to a bottom side of the glass interposer, the bottom side of the glass interposer comprising one or more contact pads. The device package may include an integrated device die mounted and electrically connected to the top side of the glass interposer. The device package may also include an encapsulating material disposed over at least a side surface of the glass interposer, a portion of the top surface of the glass interposer, and a side surface of the integrated device die.

公开(公告)号：US20240186212A1

公开(公告)日：2024-06-06

申请号：US18062087

申请日：2022-12-06

申请人： NXP USA, Inc.

发明人： Stephen Reza Hiemstra ,  Lu Wang ,  Joshua Bennett English

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L23/66 ,  H01L25/07 ,  H01L25/16 ,  H03F1/02 ,  H03F3/195 ,  H03F3/60

CPC分类号： H01L23/3675 ,  H01L23/66 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L25/165 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/604 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/32245 ,  H01L2224/48195 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2924/1421 ,  H01L2924/2027 ,  H01L2924/30107 ,  H01L2924/30111 ,  H03F2200/451

摘要： A power amplifier module includes a module substrate. First and second heat dissipation structures extend through the module substrate, and each has a first surface exposed at a mounting surface of the module substrate, and a second surface exposed at a bottom surface of the module substrate. The first surfaces of the first and second heat dissipation structures are physically separated by a portion of the mounting surface. First and second amplifier dies are coupled to the first surface of the first heat dissipation structure. The first amplifier die includes a first power transistor that functions as a driver amplifier. The second amplifier die includes a second power transistor that functions as a first final amplifier. The third amplifier die is coupled to the first surface of the second heat dissipation structure, and the third amplifier die includes a third power transistor that functions as a second final amplifier.

公开(公告)号：US11996606B2

公开(公告)日：2024-05-28

申请号：US18064594

申请日：2022-12-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Po-Yao Chuang ,  Po-Hao Tsai ,  Shin-Puu Jeng

IPC分类号： H01Q1/22 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H01Q9/04 ,  H01Q19/10 ,  H01L21/683 ,  H01L21/82 ,  H01L25/065

CPC分类号： H01Q1/2283 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01Q9/0407 ,  H01Q19/10 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/82 ,  H01L24/97 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2223/6677 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/92225 ,  H01L2224/95001 ,  H01L2924/1421

摘要： A method includes bonding an antenna substrate to a redistribution structure. The antenna substrate has a first part of a first antenna, and the redistribution structure has a second part of the first antenna. The method further includes encapsulating the antenna substrate in an encapsulant, and bonding a package component to the redistribution structure. The redistribution structure includes a third part of a second antenna, and the package component includes a fourth part of the second antenna.