公开(公告)号：US10541148B2

公开(公告)日：2020-01-21

申请号：US16220248

申请日：2018-12-14

Applicant: Raytheon Company

Inventor： Kezia Cheng ,  Kamal Tabatabaie Alavi ,  Adrian D. Williams ,  Christopher J. MacDonald ,  Kiuchul Hwang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/321 ,  H01L29/45 ,  H01L21/3205 ,  H01L21/285

Abstract: A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

公开(公告)号：US10439035B2

公开(公告)日：2019-10-08

申请号：US16033500

申请日：2018-07-12

Applicant: Raytheon Company

Inventor： Kamal Tabatabaie-Alavi ,  Kezia Cheng ,  Christopher J. MacDonald

IPC: H01L29/80 ,  H01L29/47 ,  H01L21/285 ,  H01L29/20 ,  H01L29/78 ,  H01L29/778

Abstract: A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

公开(公告)号：US20190198346A1

公开(公告)日：2019-06-27

申请号：US16220248

申请日：2018-12-14

Applicant: Raytheon Company

Inventor： Kezia Cheng ,  Kamal Tabatabaie Alavi ,  Adrian D. Williams ,  Christopher J. MacDonald ,  Kiuchul Hwang

IPC: H01L21/321 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/45

Abstract: A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

公开(公告)号：US20180323274A1

公开(公告)日：2018-11-08

申请号：US16033500

申请日：2018-07-12

Applicant: Raytheon Company

Inventor： Kamal Tabatabaie-Alavi ,  Kezia Cheng ,  Christopher J. MacDonald

IPC: H01L29/47 ,  H01L29/778 ,  H01L21/285 ,  H01L29/20 ,  H01L29/78

Abstract: A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

公开(公告)号：US10026823B1

公开(公告)日：2018-07-17

申请号：US15452986

申请日：2017-03-08

Applicant: Raytheon Company

Inventor： Kamal Tabatabaie-Alavi ,  Kezia Cheng ,  Christopher J. MacDonald

IPC: H01L29/80 ,  H01L29/47 ,  H01L21/285 ,  H01L29/20 ,  H01L29/78

Abstract: A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.