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公开(公告)号：US20220393329A1
公开(公告)日：2022-12-08
申请号：US17339289
申请日：2021-06-04
Applicant: Regents of the University of Minnesota
Inventor： Bethanie Joyce Hills Stadler , Joseph Um , Yali Zhang , Rhonda Franklin , Rashaunda Henderson
Abstract: A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.
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公开(公告)号：US12142805B2
公开(公告)日：2024-11-12
申请号：US17339267
申请日：2021-06-04
Applicant: Regents of the University of Minnesota
Inventor： Rhonda Franklin , Yali Zhang , Joseph Um , Bethanie Joyce Hills Stadler , Rashaunda Henderson
Abstract: A complementary metal-oxide-semiconductor (CMOS) device includes a metal oxide layer comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of an electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer opposite the first side, a first electrically conducting layer disposed on the first side of the metal oxide layer, and a second electrically conducting layer disposed on the second side of the metal oxide layer. The nanowires form a via electrically connecting first electrically conducting layer and the second electrically conducting layer.
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公开(公告)号：US12100879B2
公开(公告)日：2024-09-24
申请号：US17339289
申请日：2021-06-04
Applicant: Regents of the University of Minnesota
Inventor： Bethanie Joyce Hills Stadler , Joseph Um , Yali Zhang , Rhonda Franklin , Rashaunda Henderson
CPC classification number: H01P3/003 , C25D11/045 , C25D11/18 , C25D11/20 , C25D11/24 , H01L23/66 , H01P11/001 , H01L2223/6627
Abstract: A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.
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公开(公告)号：US20220393328A1
公开(公告)日：2022-12-08
申请号：US17339267
申请日：2021-06-04
Applicant: Regents of the University of Minnesota
Inventor： Rhonda Franklin , Yali Zhang , Joseph Um , Bethanie Joyce Hills Stadler , Rashaunda Henderson
Abstract: A complementary metal-oxide-semiconductor (CMOS) device includes a metal oxide layer comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of an electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer opposite the first side, a first electrically conducting layer disposed on the first side of the metal oxide layer, and a second electrically conducting layer disposed on the second side of the metal oxide layer. The nanowires form a via electrically connecting first electrically conducting layer and the second electrically conducting layer.
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