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公开(公告)号：US20230411221A1
公开(公告)日：2023-12-21
申请号：US17843933
申请日：2022-06-17
发明人： Rhonda Franklin , Aditya Dave , Yali Zhang , Bethanie Joyce Hills Stadler , Allison Harpel , Rashaunda Henderson , Nikita Mahjabeen
IPC分类号： H01L21/8238 , H01L23/66 , H01L29/06 , G01R31/28
CPC分类号： H01L21/823871 , H01L23/66 , H01L29/0669 , G01R31/2887 , H01L2221/1078
摘要： A device includes a substrate and at least one electrically conducting portion supported by the substrate, the at least one electrically conducting portion including a signal line and a ground plane electrically isolated from the signal line. The electrically conducting portion includes a layer of a first electrically conducting material and a layer of a metal oxide material including anodic aluminum oxide (AAO) and one or more nanowires (NW) of a second electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer of the metal oxide material opposite the first side.
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公开(公告)号：US20220393329A1
公开(公告)日：2022-12-08
申请号：US17339289
申请日：2021-06-04
摘要： A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.
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公开(公告)号：US12100879B2
公开(公告)日：2024-09-24
申请号：US17339289
申请日：2021-06-04
CPC分类号： H01P3/003 , C25D11/045 , C25D11/18 , C25D11/20 , C25D11/24 , H01L23/66 , H01P11/001 , H01L2223/6627
摘要： A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.
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公开(公告)号：US20220393328A1
公开(公告)日：2022-12-08
申请号：US17339267
申请日：2021-06-04
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a metal oxide layer comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of an electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer opposite the first side, a first electrically conducting layer disposed on the first side of the metal oxide layer, and a second electrically conducting layer disposed on the second side of the metal oxide layer. The nanowires form a via electrically connecting first electrically conducting layer and the second electrically conducting layer.
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