公开(公告)号：US10115652B2

公开(公告)日：2018-10-30

申请号：US15430455

申请日：2017-02-11

Applicant: Renesas Electronics Corporation

Inventor： Hideo Numabe ,  Koji Tateno ,  Yusuke Ojima ,  Yoshihiko Yokoi ,  Shinya Ishida ,  Hitoshi Matsuura

IPC: H01L27/06 ,  H01L23/34 ,  H01L21/265 ,  H01L21/285 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02 ,  H01L29/06 ,  H03K17/16 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H03K17/08

Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.