Radio frequency switch for providing constant isolation over multiple frequency bands

    公开(公告)号:US11539362B1

    公开(公告)日:2022-12-27

    申请号:US17565395

    申请日:2021-12-29

    Abstract: A radio frequency (RF) switch includes a first terminal, a second terminal, a series switch circuit, a shunt switch circuit, an inductor and a reference voltage terminal. An RF signal at the first terminal. The series switch circuit is coupled to the first terminal, the second terminal, and the shunt switch circuit. The shunt switch circuit includes a sub-switch circuit, a transistor coupled to the sub-switch circuit, and a compensation capacitor parallel-coupled to the transistor. The inductor is coupled to the shunt switch circuit and the reference voltage terminal. When the RF signal is operated in a first frequency band, the first transistor is turned on for the shunt switch circuit and the inductor to provide a first impedance. When the RF signal is operated in a second frequency band, the first transistor is turned off for the shunt switch circuit and the inductor to provide a second impedance.

    SIGNAL SWITCHING APPARATUS
    2.
    发明申请

    公开(公告)号:US20200028357A1

    公开(公告)日:2020-01-23

    申请号:US16515015

    申请日:2019-07-17

    Abstract: A signal switching apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipating circuit. The signal control switch coupled between a first signal transceiving end and a second signal transceiving end is turned on or turned off according to a first control signal. The switch circuit having at least one first transistor is controlled by a second control signal to be turned on or off, and a first end of the switch circuit is coupled to the first signal transceiving end. The blocking capacitor is coupled between a second end of the switch circuit and a reference voltage terminal. The surge current dissipating circuit having at least one second transistor is coupled between the second end of the switch circuit and the reference voltage terminal. The second transistor is configured to dissipate a surge current and also turned off when operated normally.

    TRANSISTOR FOR INCREASING A RANGE OF A SWING OF A SIGNAL

    公开(公告)号:US20180076194A1

    公开(公告)日:2018-03-15

    申请号:US15638351

    申请日:2017-06-29

    CPC classification number: H01L27/0629 H01L29/7833

    Abstract: A transistor includes a first doping well, a second doping well, a first doping area, a second doping area, a gate layer, and at least one compensation capacitor. The first doping well and the second doping well are formed in a structure layer. The first doping area and the second doping area are formed in the first doping well and have a first conductivity type, the second doping well has a second conductivity type, and the first doping area is used for transmitting the signal. The at least one compensation capacitor is used for adjusting a voltage drop of a parasitic junction capacitor between the first doping area and the first doping well, a voltage drop of a parasitic junction capacitor between the first doping well and the second doping well, or a voltage drop of a parasitic junction capacitor between the second doping well and the structure layer.

    SWITCHING CIRCUIT
    4.
    发明申请

    公开(公告)号:US20210376823A1

    公开(公告)日:2021-12-02

    申请号:US16993218

    申请日:2020-08-13

    Abstract: A switching circuit includes a first transmission terminal, a second transmission terminal, a third transmission terminal, and a variable impedance circuit. The first and the second transmission terminals coupled to a common node form a first transmission path. The third transmission terminal coupled to the common node forms a second transmission path with the first transmission terminal. The variable impedance circuit has a first terminal coupled between the common node and the third transmission terminal, and a second terminal coupled to a first reference potential terminal. When the first transmission path transmits a first signal, a first frequency bandwidth range provided by the variable impedance circuit is determined according to a first frequency of the first signal so that the variable impedance circuit provides low impedance in the first frequency bandwidth range, and the first frequency bandwidth range covers the first frequency.

    Transistor for increasing a range of a swing of a signal

    公开(公告)号:US10510748B2

    公开(公告)日:2019-12-17

    申请号:US15638351

    申请日:2017-06-29

    Abstract: A transistor includes a first doping well, a second doping well, a first doping area, a second doping area, a gate layer, and at least one compensation capacitor. The first doping well and the second doping well are formed in a structure layer. The first doping area and the second doping area are formed in the first doping well and have a first conductivity type, the second doping well has a second conductivity type, and the first doping area is used for transmitting the signal. The at least one compensation capacitor is used for adjusting a voltage drop of a parasitic junction capacitor between the first doping area and the first doping well, a voltage drop of a parasitic junction capacitor between the first doping well and the second doping well, or a voltage drop of a parasitic junction capacitor between the second doping well and the structure layer.

    Signal switching apparatus
    6.
    发明授权

    公开(公告)号:US11165249B2

    公开(公告)日:2021-11-02

    申请号:US16515015

    申请日:2019-07-17

    Abstract: A signal switching apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipating circuit. The signal control switch coupled between a first signal transceiving end and a second signal transceiving end is turned on or turned off according to a first control signal. The switch circuit having at least one first transistor is controlled by a second control signal to be turned on or off, and a first end of the switch circuit is coupled to the first signal transceiving end. The blocking capacitor is coupled between a second end of the switch circuit and a reference voltage terminal. The surge current dissipating circuit having at least one second transistor is coupled between the second end of the switch circuit and the reference voltage terminal. The second transistor is configured to dissipate a surge current and also turned off when operated normally.

    Switching circuit
    7.
    发明授权

    公开(公告)号:US11228308B2

    公开(公告)日:2022-01-18

    申请号:US16993218

    申请日:2020-08-13

    Abstract: A switching circuit includes a first transmission terminal, a second transmission terminal, a third transmission terminal, and a variable impedance circuit. The first and the second transmission terminals coupled to a common node form a first transmission path. The third transmission terminal coupled to the common node forms a second transmission path with the first transmission terminal. The variable impedance circuit has a first terminal coupled between the common node and the third transmission terminal, and a second terminal coupled to a first reference potential terminal. When the first transmission path transmits a first signal, a first frequency bandwidth range provided by the variable impedance circuit is determined according to a first frequency of the first signal so that the variable impedance circuit provides low impedance in the first frequency bandwidth range, and the first frequency bandwidth range covers the first frequency.

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