公开(公告)号：US20240014154A1

公开(公告)日：2024-01-11

申请号：US18186974

申请日：2023-03-21

Applicant: Richtek Technology Corporation

Inventor： Wu-Te WENG ,  Yong-Zhong HU

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/02 ,  H01L24/03 ,  H01L2224/02381 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/0239 ,  H01L2924/01013 ,  H01L2224/05085 ,  H01L2224/03462 ,  H01L2224/0391

Abstract: A semiconductor device with a pad structure resistant to plasma damage includes: a main pad portion including main conductor units and main via units; a sub-pad portion including sub-conductor units and sub-via units; a pad bonding unit in direct contact with and in connection with a top main conductor unit, wherein the top main conductor unit is the main conductor unit formed in a top metal layer; and a bridge pad unit in direct contact with a top sub-conductor unit, wherein the top sub-conductor unit is the sub-conductor unit formed in the top metal layer. The bridge pad unit is in direct contact with the pad bonding unit. The main pad portion and sub-pad portion are located below the pad bonding unit and bridge pad unit respectively, and the main pad portion and the sub-pad portion are not in direct connection with each other.