公开(公告)号：US4888672A

公开(公告)日：1989-12-19

申请号：US288793

申请日：1988-11-18

申请人： Rihei Hiramatsu ,  Seiji Imano ,  Kazushi Watanabe ,  Shinzo Takeishi

发明人： Rihei Hiramatsu ,  Seiji Imano ,  Kazushi Watanabe ,  Shinzo Takeishi

IPC分类号： H02M7/537 ,  H02M3/338

CPC分类号： H02M3/338

摘要： When the power source voltage is charged to a capacitor between the source side of a MOSFET and a saturation reactor at the time of starting, the gate voltage of the MOSFET is caused to rise. When this charging voltage or the gate voltage exceeds the threshold voltage, the MOSFET is energized. The energization of this MOSFET induces a voltage in the tertiary self-excited oscillation winding through the primary winding, and a part of the induced voltage is applied to the gate of the MOSFET while some other part is applied to the reactor. This causes the magnetic flux of the saturation reactor to be set to the direction opposite that which had been set before. When the product of the voltages applied to the saturation reactor has reached the level for the allowable saturation magnetic flux density the saturation reactor is saturated and the gate voltage is discharged to turn off the MOSFET. When the MOSFET is energized once, the setting and resetting of the saturation reactor is repeated alternately due to the actions of the primary winding and the tertiary self-excited winding to enter the state of stable operation.

摘要翻译： 当电源电压在MOSFET的源极侧与饱和电抗器之间的电容器充电时，MOSFET的栅极电压升高。 当该充电电压或栅极电压超过阈值电压时，MOSFET通电。 该MOSFET的通电在通过初级绕组的三次自激振荡绕组中产生电压，并且将一部分感应电压施加到MOSFET的栅极，而另一些部分被施加到反应器。 这使得饱和电抗器的磁通量被设定为与之前设置的方向相反的方向。 当施加到饱和电抗器的电压的乘积达到容许饱和磁通密度的水平时，饱和电抗器饱和，并且栅极电压被放电以关断MOSFET。 当MOSFET通电一次时，由于初级绕组和三次自励绕组的动作进入稳定运行状态，饱和电抗器的设定和复位交替重复。

公开(公告)号：US4787020A

公开(公告)日：1988-11-22

申请号：US156208

申请日：1988-02-16

申请人： Rihei Hiramatsu ,  Tokunari Inoue ,  Kazushi Watanabe

发明人： Rihei Hiramatsu ,  Tokunari Inoue ,  Kazushi Watanabe

IPC分类号： H02M3/28 ,  H01F27/28 ,  H02M3/335

CPC分类号： H02M3/33553

摘要： Disclosed is a full-wave output type forward converter wherein a main transformer having a primary winding connected in series with a switching element includes two secondary windings as winding halves divided by a center tap and electromagnetically coupled. A leakage self inductance can be reduced to obtain a high-frequency, high-power arrangement.

摘要翻译： 公开了一种全波输出型正激变换器，其中具有与开关元件串联连接的初级绕组的主变压器包括两个次级绕组，作为被中心抽头除以电磁耦合的二次绕组。 可以减小泄漏自感以获得高频，高功率的布置。

公开(公告)号：US4901214A

公开(公告)日：1990-02-13

申请号：US288792

申请日：1988-11-18

申请人： Rihei Hiramatsu ,  Shigeo Watanabe ,  Yasuyuki Okumura ,  Jun Maruyama

发明人： Rihei Hiramatsu ,  Shigeo Watanabe ,  Yasuyuki Okumura ,  Jun Maruyama

IPC分类号： H02M3/28 ,  H02M3/338

CPC分类号： H02M3/338

摘要： A self-excited inverter circuit primarily includes a main transformer two switching elements e.g. the first and second (FET) switching elements, wherein capacitors at both ends of said first FET are charged during a time T.sub.1 -T.sub.2 when said first FET is turned off, and the voltage V.sub.g1 across said first FET is clamped by a charge voltage V.sub.c1 and then, a voltage V.sub.gs is applied across the gate and the source of said second FET for electrical continuity to cause the voltage to be clamped. The clamped state is maintained from T.sub.1 to T.sub.2, the saturation reactor is saturated at time T.sub.3, and V.sub.gs, which has been negative, starts to change toward O, thereby causing the first FET to change to ON; V.sub.q falls towards VPi at TP3 and further towards zero point. Thus, the voltage V.sub.q2 changes to zero to cause V.sub.gs of the second FET to become zero and the second FET to be shut off. When said voltage V.sub.q2 is clamped to a fixed value, a high -V.sub.sc (L) can be obtained in the case of Vi(L), whereas a low -V.sub.sc can be obtained in the case of Vi(H); and the continuity angle, or duty cycle, (T.sub.1 -T.sub.2)/(T.sub.1 -T.sub.3) of the first FET is naturally controlled to be kept in a desirable direction.

摘要翻译： 自激逆变器电路主要包括主变压器两个开关元件，例如 所述第一和第二FET（FET）开关元件，其中当所述第一FET截止时，所述第一FET两端的电容器在时间T1-T2期间被充电，并且所述第一FET之间的电压Vg1被钳位在充电电压Vc1 然后将电压Vgs施加在所述第二FET的栅极和源极之间以进行电连续性，以使电压被钳位。 夹持状态从T1保持到T2，饱和电抗器在时间T3饱和，Vgs（已经为负）开始向O变化，从而使第一FET变为ON; Vq在TP3向VPi下降，进一步向零点。 因此，电压Vq2变为零，使第二FET的Vgs变为零，第二FET被切断。 当所述电压Vq2被钳位到固定值时，在Vi（L）的情况下可以获得高-Vsc（L），而在Vi（H）的情况下可以获得低-Vsc。 并且自然地控制第一FET的连续性角度或占空比（T1-T2）/（T1-T3）保持在期望的方向。

公开(公告)号：US4481461A

公开(公告)日：1984-11-06

申请号：US430064

申请日：1982-09-30

申请人： Rihei Hiramatsu ,  Ko Takeshita ,  Tokunari Inoue

发明人： Rihei Hiramatsu ,  Ko Takeshita ,  Tokunari Inoue

IPC分类号： H02M3/155 ,  H02M3/158 ,  G05F1/46

CPC分类号： H02M3/158

摘要： A device including a main circuit comprising a switching main transistor unit, a smoothing reactor, a smoothing condenser and a commutation diode. To control the conduction and nonconduction of said main transistor unit by means of the output obtained by detecting and amplifying the output voltage of said main circuit, the main transistor unit comprises at least two main transistors connected in parallel with each other. A secondary winding of a current transformer is connected between the bases of the main transistors. A parallel circuit comprising a diode and a condenser is connected between the neutral point of the secondary winding and the emitters of the main transistors. A control circuit comprises two transistors which are conductive and nonconductive alternately and outputs derived from the latter transistors are applied alternately to two primary windings of the current transformer and provision is made to short the ends of the primary winding of the current transformer while the two transistors of the control circuit are both nonconductive.

摘要翻译： 一种包括主电路的装置，包括开关主晶体管单元，平滑电抗器，平滑电容器和换向二极管。 为了通过检测和放大所述主电路的输出电压获得的输出来控制所述主晶体管单元的导通和不导通，所述主晶体管单元包括彼此并联连接的至少两个主晶体管。 电流互感器的次级绕组连接在主晶体管的基极之间。 包括二极管和电容器的并联电路连接在次级绕组的中性点和主晶体管的发射极之间。 控制电路包括交替导电和不导电的两个晶体管，并且将衍生自后者的晶体管的输出交替施加到电流互感器的两个初级绕组，并且使电流互感器的初级绕组的端部短路，同时两个晶体管 的控制电路都是不导通的。