公开(公告)号：US20040194703A1

公开(公告)日：2004-10-07

申请号：US10817618

申请日：2004-04-02

Applicant: Rohm and Haas Electronic Materials, L.L.C.

Inventor： Deodatta Vinayak Shenai-Khatkhate ,  Michael Brendan Power

IPC: C23C016/00 ,  C08F004/44

CPC classification number: C23C16/28 ,  C07C391/00 ,  C07C395/00 ,  C07F7/0807 ,  C07F7/0827 ,  C07F7/30 ,  C23C16/18

Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

Abstract translation: 提供了适合用作第IV族含金属膜的气相沉积前体的有机金属化合物。 还提供了使用某些有机金属前体沉积IV族含金属膜的方法。 这种含IV族的含金属膜在电子器件的制造中特别有用。