公开(公告)号：US20240337014A1

公开(公告)日：2024-10-10

申请号：US18575963

申请日：2022-06-28

申请人： ADEKA CORPORATION

发明人： Tomoharu YOSHINO ,  Keisuke TAKEDA ,  Atsushi YAMASHITA

IPC分类号： C23C16/18 ,  C07F15/06 ,  C23C16/448 ,  C23C16/455

CPC分类号： C23C16/18 ,  C07F15/065 ,  C23C16/4485 ,  C23C16/45553

摘要： Provided is a cobalt compound represented by the following general formula (1):




where R1 to R7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2);




where R8 to R10 each independently represent an alkyl group having 1 to 5 carbon atoms, A1 and A2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

公开(公告)号：US20240317788A1

公开(公告)日：2024-09-26

申请号：US18262532

申请日：2022-02-04

申请人： UMICORE AG & CO. KG

发明人： Tobias VOLLGRAFF ,  Joerg SUNDERMEYER ,  Angelino DOPPIU

IPC分类号： C07F17/02 ,  B01J31/22 ,  C07C13/52 ,  C07F7/08 ,  C08G77/08 ,  C23C16/18 ,  C23C16/455

CPC分类号： C07F17/02 ,  B01J31/2295 ,  C07C13/52 ,  C07F7/0879 ,  C08G77/08 ,  C23C16/18 ,  C23C16/45525 ,  C07C2602/30

摘要： The invention relates to a method for producing complexes of precious metals, in particular platinum, which have at least one organo-dihydroazulenyl ligand. The invention also relates to complexes of precious metals, in particular platinum, which have at least one organo-dihydroazulenyl ligand and to the use of the aforementioned metal complexes as precatalysts or catalysts in a chemical reaction or as precursor compounds for producing a layer which contains a precious metal, in particular platinum, or a metal layer consisting of a precious metal, in particular platinum, in particular on at least one surface of a substrate. The invention additionally relates to a substrate, in particular a substrate which can be obtained according to such a method. The invention also relates to a crosslinkable silicon composition comprising at least one compound with aliphatic carbon-carbon multi-bonds, at least one compound with Si-bonded hydrogen atoms, and at least one platinum (IV) complex of the aforementioned type. The invention also relates to novel alkali metal organo-dihydroazulenyls which can be used to produce metal complexes, in particular of the aforementioned type.

公开(公告)号：US12091427B2

公开(公告)日：2024-09-17

申请号：US17599126

申请日：2020-03-27

申请人： Umicore AG & Co. KG

发明人： Joerg Sundermeyer ,  Henrik Schumann ,  Wolf Schorn ,  Nicholas Rau ,  Annika Frey ,  Ralf Karch ,  Eileen Woerner ,  Angelino Doppiu

IPC分类号： C07F15/00 ,  C23C16/18 ,  C23C16/455

CPC分类号： C07F15/0033 ,  C07F15/0046 ,  C23C16/18 ,  C23C16/45553

摘要： Metal complexes of formula (I) are described:

[M(L1)x(L2)y(hydra)z]n  formula (I)



wherein:
M=metal atom having an atomic number selected from the ranges a) through c):

a) 12, 21 to 34, with the exception of 30,
b) 39 to 52, with the exception of 48,
c) 71 to 83, with the exception of 80,


L1=neutral or anionic ligand, with x=0 or 1,
L2=neutral or anionic ligand, with y=0 or 1,
(hydra)=acetone dimethylhydrazone monoanion, with z=1, 2, or 3,
n=1 or 2, and
the total charge of the complex is 0.

公开(公告)号：US20240301549A1

公开(公告)日：2024-09-12

申请号：US18195052

申请日：2023-05-09

申请人： Applied Materials, Inc. ,  Wayne State University

发明人： Thomas Joseph Knisley ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Shalini Tripathi ,  Charles H. Winter ,  Zachary J. Devereaux

IPC分类号： C23C16/18 ,  C07F11/00

CPC分类号： C23C16/18 ,  C07F11/005

摘要： Metal complexes with nitrile ligands of the type MO2X2L2, where M is molybdenum or tungsten, X is a halogen, each L is independently an organonitrile ligand with the general formula NCR, where each R is independently a C2-C18 group. Metal complexes with dinitrile bidentate ligands of the type MO2X2L′, where L′ is a dintrile ligand, and dinitrile bridging ligands of the type (MO2X2)2L′, where L′ is a dinitrile bridging ligand connecting the two metal atoms. Methods of making and using the metal complexes are described.

公开(公告)号：US12051586B2

公开(公告)日：2024-07-30

申请号：US17022198

申请日：2020-09-16

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seung-Min Ryu ,  Jiyu Choi ,  Gyu-Hee Park ,  Younjoung Cho

IPC分类号： H01L21/02 ,  C01G19/00 ,  C07C211/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/455

CPC分类号： H01L21/02205 ,  C01G19/00 ,  C07C211/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/303 ,  C23C16/45553

摘要： A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:

M2L1)n  [Chemical Formula 1]

In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2.





In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

申请人： ASM IP Holding, B.V.

发明人： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC分类号： C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC分类号： C23C16/14 ,  C23C16/18 ,  C23C16/4408

摘要： Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20240218510A1

公开(公告)日：2024-07-04

申请号：US18398894

申请日：2023-12-28

申请人： ASM IP Holding B. V.

发明人： Paul Chatelain ,  Arpita Saha ,  David Kurt de Roest ,  Yoann Tomczak ,  Charles Dezelah ,  Daniele Piumi

IPC分类号： C23C16/455 ,  C23C16/18 ,  C23C16/56

CPC分类号： C23C16/45542 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/56

摘要： Systems and methods for forming an antimony containing film on a substrate. Related structures and films are also disclosed. The antimony films are be formed by a plasma enhanced atomic layer deposition process. The antimony films can be utilized as underlayers in EUV lithography processes.

公开(公告)号：US20240191344A1

公开(公告)日：2024-06-13

申请号：US18555055

申请日：2022-04-07

申请人： Tokyo Electron Limited

发明人： Hiroki MURAKAMI ,  Shuji AZUMO ,  Yumiko KAWANO

IPC分类号： C23C16/18 ,  C23C16/02 ,  C23C16/34

CPC分类号： C23C16/18 ,  C23C16/0227 ,  C23C16/345

摘要： A surface processing method of removing a metal oxide film on a surface of a metal layer and a substrate processing apparatus are provided. The surface processing method for a substrate having a metal layer includes supplying a metal complex compound having a cyclopentadienyl ligand to a processing chamber and removing a metal oxide film on the surface of the metal layer using the metal complex compound.

公开(公告)号：US20240175135A1

公开(公告)日：2024-05-30

申请号：US18283810

申请日：2022-03-27

申请人： TES CO., LTD

发明人： Sung-Chul CHOI ,  Kwang-Il CHO

IPC分类号： C23C16/458 ,  C23C16/18 ,  C23C16/46

CPC分类号： C23C16/4586 ,  C23C16/18 ,  C23C16/463

摘要： The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus in which a coil connector through which a coil extension of a heating coil passes is provided in a chamber to improve assemblability and ease of maintenance by disposing, outside the chamber, a connector connecting a feedthrough and the heating coil for heating a substrate.

公开(公告)号：US11975357B2

公开(公告)日：2024-05-07

申请号：US17547083

申请日：2021-12-09

申请人： ASM IP HOLDING B.V.

发明人： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC分类号： C23C16/06 ,  B05D3/10 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C18/06 ,  C23C18/12

CPC分类号： B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

摘要： Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.