公开(公告)号：US20250100250A1

公开(公告)日：2025-03-27

申请号：US18729759

申请日：2023-01-25

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Denis GUIMARD ,  Anne LELARGE

IPC: B32B17/10 ,  C23C14/08 ,  C23C14/35

Abstract: A transparent substrate provided on one of its main surfaces with a stack of thin layers, the stack of layers including the following layers starting from the substrate a first dielectric module of one or more thin layers; a tungsten oxide absorbing layer; a second dielectric module of one or more thin layers; wherein the tungsten oxide includes at least one doping element selected from chemical elements of group 1 according to IUPAC nomenclature.

公开(公告)号：US20150311470A1

公开(公告)日：2015-10-29

申请号：US14651795

申请日：2013-12-10

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Denis GUIMARD ,  Anne LELARGE

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5215 ,  C03C17/36 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/3655 ,  H01L31/022466 ,  H01L51/56 ,  H01L2251/306 ,  H01L2251/308 ,  H01L2251/558 ,  H01L2251/562

Abstract: A conductive support for an OLED, includes a dielectric sublayer, with an optical thickness L1 of greater than 20 nm and less than 180 nm, including a first crystalline contact layer based on zinc oxide, a first silver layer of less than 20 nm, a dielectric separating layer, with an optical thickness L2 of greater than 80 nm and less than 280 nm, including in this order a layer of zinc oxide with a thickness e2, directly on the first silver layer, an optional amorphous layer, based on tin zinc or indium zinc or indium zinc tin oxide with a thickness ei of less than 15 nm, a second layer of zinc oxide, with a thickness ec2, the sum of ec2+e2 being at least 30 nm, a second silver layer of less than 20 nm, a metal overblocker of less than 3 nm, a dielectric electrically conductive overlayer.

Abstract translation: 用于OLED的导电支撑件包括介电子层，其光学厚度L1大于20nm且小于180nm，包括基于氧化锌的第一晶体接触层，小于20nm的第一银层， 介电分离层，其光学厚度L2大于80nm且小于280nm，包括直接在第一银层上的依次包括厚度为e2的氧化锌层，基于锡锌 或厚度为ei小于15nm的铟锌或铟锌锡氧化物，第二层氧化锌，厚度为ec2，ec2 + e2的和为至少30nm，第二银层小于20nm nm，小于3nm的金属覆盖层，介电导电覆盖层。