公开(公告)号：US11854864B2

公开(公告)日：2023-12-26

申请号：US17530169

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juyeon Kim ,  Hanmei Choi ,  Sukjin Chung ,  Bongjin Kuh ,  Changyong Kim ,  Hakyu Seong

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76229 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/76237

Abstract: A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

公开(公告)号：US11211284B2

公开(公告)日：2021-12-28

申请号：US16780810

申请日：2020-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juyeon Kim ,  Hanmei Choi ,  Sukjin Chung ,  Bongjin Kuh ,  Changyong Kim ,  Hakyu Seong

IPC: H01L21/762 ,  H01L21/02

Abstract: A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.