公开(公告)号：US20240421171A1

公开(公告)日：2024-12-19

申请号：US18818755

申请日：2024-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAESUB JUNG ,  KYUNGHO LEE ,  MASATO FUJITA ,  DOOSIK SEOL ,  KYUNGDUCK LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

公开(公告)号：US20220359585A1

公开(公告)日：2022-11-10

申请号：US17675145

申请日：2022-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE ,  DOOSIK SEOL ,  TAESUB JUNG

IPC: H01L27/146

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces disposed opposite to the first surface, a pixel separation structure disposed in the semiconductor substrate and defining and surrounding a pixel region, first and second photoelectric conversion regions disposed in the semiconductor substrate on the pixel region, a first transfer gate electrode disposed on the first surface of the semiconductor substrate and between the first photoelectric conversion region and a first floating diffusion region, a second transfer gate electrode disposed on the first surface of the semiconductor substrate and between the second photoelectric conversion region and a second floating diffusion region, a pixel gate electrode disposed on the first surface of the semiconductor substrate and overlapping one of the first and second photoelectric conversion regions, and impurity regions disposed on opposite sides of the pixel gate electrode.

公开(公告)号：US20220173139A1

公开(公告)日：2022-06-02

申请号：US17443791

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUCK LEE ,  SEUNGKI BAEK ,  KYUNGHO LEE ,  HYUNCHEOL KIM ,  DOOSIK SEOL ,  TAESUB JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes: (1) a substrate having first and second surfaces opposing each other in a first direction and a plurality of unit pixels, (2) first and second photodiodes disposed in the substrate in each of the plurality of unit pixels and isolated from each other in a second direction perpendicular to the first direction, (3) a first device isolation film disposed between the plurality of unit pixels, and (4) a pixel internal isolation film disposed in at least one of the plurality of unit pixels. A second device isolation film overlaps at least one of the first and second photodiodes in the first direction. A pair of third device isolation films: (a) extend from the first device isolation film into the unit pixel in a third direction perpendicular to the first direction and the second direction and (b) oppose each other.