公开(公告)号：US20240421171A1

公开(公告)日：2024-12-19

申请号：US18818755

申请日：2024-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAESUB JUNG ,  KYUNGHO LEE ,  MASATO FUJITA ,  DOOSIK SEOL ,  KYUNGDUCK LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

公开(公告)号：US20220173139A1

公开(公告)日：2022-06-02

申请号：US17443791

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUCK LEE ,  SEUNGKI BAEK ,  KYUNGHO LEE ,  HYUNCHEOL KIM ,  DOOSIK SEOL ,  TAESUB JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes: (1) a substrate having first and second surfaces opposing each other in a first direction and a plurality of unit pixels, (2) first and second photodiodes disposed in the substrate in each of the plurality of unit pixels and isolated from each other in a second direction perpendicular to the first direction, (3) a first device isolation film disposed between the plurality of unit pixels, and (4) a pixel internal isolation film disposed in at least one of the plurality of unit pixels. A second device isolation film overlaps at least one of the first and second photodiodes in the first direction. A pair of third device isolation films: (a) extend from the first device isolation film into the unit pixel in a third direction perpendicular to the first direction and the second direction and (b) oppose each other.