公开(公告)号：US20210057538A1

公开(公告)日：2021-02-25

申请号：US16841889

申请日：2020-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik SHIN ,  Hyunjoon ROH ,  Heungsik PARK ,  Sughyun SUNG ,  Dohaing LEE ,  Wonhyuk LEE

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/311 ,  H01L21/306 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device includes a gate pattern crossing over a substrate, the gate pattern including a gate insulating layer, a gate electrode, and a gate capping pattern sequentially stacked on the substrate, a gate spacer covering a sidewall of the gate pattern, a source/drain pattern on the substrate, the source/drain pattern being adjacent to the sidewall of the gate pattern, a contact pad on the source/drain pattern, a top surface of the contact pad being lower than a top surface of the gate electrode, a source/drain contact plug on the contact pad, and a protection spacer between the gate spacer and the source/drain contact plug, the protection spacer having a ring shape enclosing the source/drain contact plug.

公开(公告)号：US20220376080A1

公开(公告)日：2022-11-24

申请号：US17837158

申请日：2022-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik SHIN ,  Hyunjoon ROH ,  Heungsik PARK ,  Sughyun SUNG ,  Dohaing LEE ,  Wonhyuk LEE

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/311 ,  H01L21/306 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

Abstract: A semiconductor device includes a gate pattern crossing over a substrate, the gate pattern including a gate insulating layer, a gate electrode, and a gate capping pattern sequentially stacked on the substrate, a gate spacer covering a sidewall of the gate pattern, a source/drain pattern on the substrate, the source/drain pattern being adjacent to the sidewall of the gate pattern, a contact pad on the source/drain pattern, a top surface of the contact pad being lower than a top surface of the gate electrode, a source/drain contact plug on the contact pad, and a protection spacer between the gate spacer and the source/drain contact plug, the protection spacer having a ring shape enclosing the source/drain contact plug.