公开(公告)号：US20160163922A1

公开(公告)日：2016-06-09

申请号：US15042283

申请日：2016-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon-wook YOO ,  Nam-goo CHA ,  Dong-koog LEE ,  Dong-hoon LEE

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/24

CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/24 ,  H01L33/387

Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.

Abstract translation: 本发明提供一种纳米结构发光器件，其包括：第一类型半导体层; 形成在第一类型半导体层上并包括纳米孔的多个纳米结构体，以及包围纳米孔表面的活性层和第二类型半导体层; 包围并覆盖多个纳米结构的电极层; 以及形成在电极层上并分别对应于多个纳米结构的多个电阻层。

公开(公告)号：US20140166974A1

公开(公告)日：2014-06-19

申请号：US14106186

申请日：2013-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon-wook YOO ,  Nam-goo CHA ,  Dong-koog LEE ,  Dong-hoon LEE

IPC: H01L33/06

CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/24 ,  H01L33/387

Abstract: A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures.

Abstract translation: 纳米结构发光器件包括多个发光纳米结构，每个发光纳米结构具有设置在其上的电阻层。 该器件包括第一导电类型的第一半导体层和设置在第一半导体层上的多个纳米结构。 每个纳米结构包括纳米孔，以及包围纳米孔表面的第二导电类型的有源层和第二半导体层。 包围并覆盖多个纳米结构的电极层多个电阻层设置在电极层上，并且每个对应于多个纳米结构的相应纳米结构。