公开(公告)号：US20190244985A1

公开(公告)日：2019-08-08

申请号：US16262715

申请日：2019-01-30

申请人： Samsung Display Co., Ltd.

发明人： Hyun Joon KIM ,  Kyung Bae KIM ,  Kyung Hoon CHUNG ,  Mee Hye JUNG

IPC分类号： H01L27/12 ,  H01L33/38

CPC分类号： H01L27/1296 ,  H01L27/124 ,  H01L33/387 ,  H01L2933/0016

摘要： A method of manufacturing a display device, the method including providing a substrate, forming a first electrode, a second electrode spaced from the first electrode and in a same plane as the first electrode, a first alignment line connected to the first electrode, and a second alignment line connected to the second electrode on the substrate, self-aligning the plurality of light emitting elements by providing a solution containing a plurality of light emitting elements on the substrate, removing the first alignment line and the second alignment line from the substrate on which the plurality of light emitting elements are self-aligned, forming a first contact electrode electrically connecting one end of each light emitting element to the first electrode, and forming a second contact electrode electrically connecting an other end of each light emitting element to the second electrode.

公开(公告)号：US20190214530A1

公开(公告)日：2019-07-11

申请号：US16351206

申请日：2019-03-12

申请人： NICHIA CORPORATION

发明人： Kosuke SATO ,  Keiji EMURA

IPC分类号： H01L33/38 ,  H01L33/06

CPC分类号： H01L33/387 ,  H01L33/06 ,  H01L33/38

摘要： A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion configured to be bonded with a conductive wire, a first extending portion, and two second extending portions. The second electrode has a second connecting portion configured to be bonded with a conductive wire, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the two second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. Each of the second extending portions extends beyond a position of the second connecting portion.

公开(公告)号：US20190198711A1

公开(公告)日：2019-06-27

申请号：US16231776

申请日：2018-12-24

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Ju KIM ,  Hyung Jo PARK ,  Hwan Kyo KIM

IPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/62 ,  H01L33/36 ,  H01L23/00

CPC分类号： H01L33/10 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2933/0066

摘要： Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

公开(公告)号：US20190131496A1

公开(公告)日：2019-05-02

申请号：US16228575

申请日：2018-12-20

申请人： EPISTAR CORPORATION

发明人： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06 ,  H01L33/44

CPC分类号： H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

摘要： An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

公开(公告)号：US20190044030A1

公开(公告)日：2019-02-07

申请号：US15999016

申请日：2018-08-20

申请人： LG INNOTEK CO., LTD.

发明人： Hwan Hee JEONG ,  Sang Youl LEE ,  June O. SONG ,  Ji Hyung MOON ,  Kwang Ki CHOI

IPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/06 ,  H01L33/40 ,  H01L33/42 ,  H01L33/00 ,  F21Y115/10 ,  F21Y105/10 ,  F21Y113/13 ,  H01L33/10 ,  H01L33/22 ,  F21K9/23

CPC分类号： H01L33/44 ,  F21K9/23 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

公开(公告)号：US20180350872A1

公开(公告)日：2018-12-06

申请号：US15850232

申请日：2017-12-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Pun Jae CHOI ,  Jacob Chang-Lin TARN ,  Han Kyu SEONG ,  Jin Hyuk SONG ,  Yoon Joon CHOI

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/18 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L25/075 ,  F21K9/232 ,  F21K9/235 ,  F21K9/237

CPC分类号： H01L27/156 ,  F21K9/232 ,  F21K9/235 ,  F21K9/237 ,  F21V31/005 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L31/00 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/105 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62

摘要： A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.

公开(公告)号：US20180309028A1

公开(公告)日：2018-10-25

申请号：US15529511

申请日：2017-04-10

申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.

发明人： Yan Cheng

IPC分类号： H01L33/40 ,  H01L33/14

CPC分类号： H01L33/40 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387

摘要： The present invention provides a light-emitting diode. The light-emitting diode includes: an emissive layer, an electron transportation layer and a hole transportation layer that are respectively set in contact with upper and lower surfaces of the emissive layer, a first electrode set in contact with the hole transportation layer, and a second electrode set in contact with the electron transportation layer; and the electron transportation layer is formed of a material comprising graphene so that the excellent electrical conduction property and heat conduction capability of the graphene material help improve the heat dissipation capability and electron transportation capability of the light-emitting diode the electron transportation layer so as to enhance the service life and lighting efficiency of the light-emitting diode.

公开(公告)号：US20180254383A1

公开(公告)日：2018-09-06

申请号：US15756935

申请日：2016-08-31

申请人： OSRAM Opto Semiconductors GmbH

发明人： Korbinian Perzlmaier ,  Anna Kasprzak-Zablocka ,  Christian Leirer

IPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00 ,  H01L33/50

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

摘要： A method for producing an optoelectronic component is disclosed. In an embodiment the method includes a metallization with first mask structures is deposited directionally, and then a first passivation material is deposited non-directionally onto the metallization. Further, cutouts are introduced into the semiconductor body, such that the cutouts extend right into an n-type semiconductor region, and a second passivation material is applied on side faces of the cutouts. Furthermore, an n-type contact material is applied, structured and passivated. Moreover, contact structures are arranged on the semiconductor body and electrically connected to the n-type contact material and the metallization, wherein the contact structures and the semiconductor body are covered with a potting.

公开(公告)号：US20180219132A1

公开(公告)日：2018-08-02

申请号：US15747728

申请日：2016-08-03

申请人： OSRAM Opto Semiconductors GmbH

发明人： Julian IKONOMOV ,  Martin LEMBERGER ,  Bjoern MUERMANN

IPC分类号： H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/36 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

摘要： The invention relates to an optoelectronic component. The component comprises a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state WO, with WO=−2, and the titanium has the oxidation state WT, with 0

公开(公告)号：US10038127B2

公开(公告)日：2018-07-31

申请号：US15493883

申请日：2017-04-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

摘要： A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.