公开(公告)号：US09324420B2

公开(公告)日：2016-04-26

申请号：US14446347

申请日：2014-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom-Kyu Shin ,  Ung-Hwan Kim ,  Jun-Jin Kong ,  Eun-Cheol Kim ,  Dong-Min Shin ,  Myung-Kyu Lee

IPC: G11C16/06 ,  G11C11/56 ,  G11C16/34 ,  G11C16/04 ,  G11C16/26 ,  G06F12/00

CPC classification number: G11C11/5642 ,  G06F12/00 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3495

Abstract: A method of estimating a deterioration state of a memory device comprises reading data from selected memory cells connected to a selected wordline of a memory cell array by applying to the selected wordline a plurality of distinct read voltages having values corresponding to at least one valley of threshold voltage distributions of the selected memory cells, generating quality estimation information indicating states of the threshold voltage distributions using the data read from the selected memory cells, and determining a deterioration state of a storage area including the selected memory cells based on the generated quality estimation information.

Abstract translation: 一种估计存储器件劣化状态的方法包括通过向所选择的字线应用具有对应于至少一个阈值谷值的多个不同读取电压来从连接到存储器单元阵列的选定字线的选定存储单元读取数据 选择的存储单元的电压分布，使用从选择的存储单元读取的数据生成指示阈值电压分布的状态的质量估计信息，并且基于生成的质量估计信息来确定包括所选存储单元的存储区域的劣化状态 。