公开(公告)号：US20210210494A1

公开(公告)日：2021-07-08

申请号：US17186936

申请日：2021-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN-JUNG LEE ,  JOON-SEOK MOON ,  DONGSOO WOO

IPC: H01L27/108 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/49 ,  H01L29/06

Abstract: A semicondcutor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.

公开(公告)号：US20200219884A1

公开(公告)日：2020-07-09

申请号：US16550192

申请日：2019-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN-JUNG LEE ,  JOON-SEOK MOON ,  DONGSOO WOO

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/28

Abstract: A semicondcutor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.

公开(公告)号：US20220302124A1

公开(公告)日：2022-09-22

申请号：US17837962

申请日：2022-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN-JUNG LEE ,  JOON-SEOK MOON ,  DONGSOO WOO

IPC: H01L27/108 ,  H01L29/06 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/49

Abstract: A semiconductor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.