公开(公告)号：US20240250114A1

公开(公告)日：2024-07-25

申请号：US18534997

申请日：2023-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinsu LEE ,  Jungwoo KANG ,  Donguk HAN ,  Hayeong KIM ,  Yirang LIM

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/315

Abstract: A capacitor structure includes a lower electrode; a dielectric pattern on a sidewall of the lower electrode; and an upper electrode structure, the upper electrode structure including a first upper electrode and a second upper electrode sequentially stacked on a sidewall of the dielectric pattern, wherein each of the first upper electrode and the second upper electrode includes a metal nitride, and the metal nitride included in the first upper electrode has a crystal orientation that is different from a crystal orientation of the metal nitride included in the second upper electrode, and a work function of the first upper electrode is greater than a work function of the second upper electrode.