公开(公告)号：US20240021664A1

公开(公告)日：2024-01-18

申请号：US18221495

申请日：2023-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junrak CHOI ,  Yaejin HONG ,  Jinsu LEE ,  Hongsik CHAE

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/485 ,  H10B12/482 ,  H10B12/315 ,  H01L28/90

Abstract: A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer. Each of the lower electrodes includes a first electrode layer having a cylindrical shape, a first insertion layer disposed on the first electrode layer and having a cylindrical shape, a second electrode layer disposed on the first insertion layer and extending to cover an upper end of the first electrode layer and an upper end of the first insertion layer. At least one of the first electrode layer and the second electrode layer has a first stress, and the first insertion layer has a second stress, different from the first stress. The first stress is one of tensile stress and compressive stress, and the second stress is the other of the tensile stress and the compressive stress.

公开(公告)号：US20240250114A1

公开(公告)日：2024-07-25

申请号：US18534997

申请日：2023-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinsu LEE ,  Jungwoo KANG ,  Donguk HAN ,  Hayeong KIM ,  Yirang LIM

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/315

Abstract: A capacitor structure includes a lower electrode; a dielectric pattern on a sidewall of the lower electrode; and an upper electrode structure, the upper electrode structure including a first upper electrode and a second upper electrode sequentially stacked on a sidewall of the dielectric pattern, wherein each of the first upper electrode and the second upper electrode includes a metal nitride, and the metal nitride included in the first upper electrode has a crystal orientation that is different from a crystal orientation of the metal nitride included in the second upper electrode, and a work function of the first upper electrode is greater than a work function of the second upper electrode.

公开(公告)号：US20230292489A1

公开(公告)日：2023-09-14

申请号：US17960578

申请日：2022-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungoo KANG ,  Jinsu LEE

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10852

Abstract: Provided is a semiconductor device. The semiconductor device includes a lower structure; a lower electrode on the lower structure; a dielectric layer on the lower electrode; and an upper electrode on the dielectric layer, wherein the lower electrode includes a bending reducing layer and a dielectric constant-increasing layer between the bending reducing layer and the dielectric layer, the dielectric constant-increasing layer is configured to increase a dielectric constant of the dielectric layer, and an elastic modulus of the bending reducing layer is greater than an elastic modulus of the dielectric constant-increasing layer.