公开(公告)号：US10153358B2

公开(公告)日：2018-12-11

申请号：US15390754

申请日：2016-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungseok Min ,  Seongjin Nam ,  Sughyun Sung ,  Youngmook Oh ,  Migyeong Gwon ,  Hyungdong Kim ,  InWon Park ,  Hyunggoo Lee

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L23/535 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/683

Abstract: A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the substrate. The fin structure includes a lower pattern and an active pattern vertically protruding from a top surface of the lower pattern. The top surface of the lower pattern includes a flat portion substantially parallel to the top surface of the substrate. The lower pattern includes a first sidewall extending in the first direction and a second sidewall extending in a second direction crossing the first direction. The first sidewall is inclined relative to the top surface of the substrate at a first angle greater than a second angle corresponding to the second sidewall that is inclined relative to the top surface of the substrate.