公开(公告)号：US20160043179A1

公开(公告)日：2016-02-11

申请号：US14713039

申请日：2015-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG JIN NOH ,  JAE HO CHOI ,  BIO KIM ,  KWANG MIN PARK ,  JAE YOUNG AHN ,  DONG CHUL YOO ,  SEUNG HYUN LIM ,  JEON IL LEE

IPC: H01L29/10 ,  H01L29/792 ,  H01L29/51 ,  H01L29/788

CPC classification number: H01L29/518 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/7883 ,  H01L29/792

Abstract: A semiconductor device includes: a substrate including a channel region; a gate dielectric a tunneling layer, a charge storage layer, and a blocking layer sequentially disposed on the channel region; and a gate electrode disposed on the gate dielectric, wherein the tunneling layer has variations in nitrogen concentrations in a direction perpendicular to the channel region, and has a maximum nitrogen concentration in a position shifted from a center of the tunneling layer toward the charge storage layer.

Abstract translation: 半导体器件包括：衬底，包括沟道区; 栅极电介质，隧道层，电荷存储层和顺序地设置在沟道区上的阻挡层; 以及设置在所述栅极电介质上的栅电极，其中所述隧道层在垂直于所述沟道区的方向上具有氮浓度的变化，并且在从所述隧道层的中心朝向所述电荷存储层偏移的位置中具有最大的氮浓度 。