公开(公告)号：US20230282512A1

公开(公告)日：2023-09-07

申请号：US17991090

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook KIM ,  Seung Yong YOO ,  Eui Bok LEE ,  Jin Nam KIM ,  Eun-Ji JUNG

IPC: H01L21/768 ,  H01L23/535

CPC classification number: H01L21/76844 ,  H01L23/535 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76895

Abstract: A semiconductor device is provided. The semiconductor device includes: a lower line structure; an upper interlayer insulating film provided on the lower line structure and having a trench formed therein, wherein the trench includes a wiring line trench and a via trench extending from the wiring line trench to the lower line structure; and an upper line structure provided in the line trench, wherein the upper line structure includes an upper barrier film and an upper filling film. The upper filling film includes a first sub-filling film in contact with the upper interlayer insulating film, and a second sub-filling film provided on the first sub-filling film. The first sub-filling film fills an entirety of the upper via trench and covers at least a portion of a bottom surface of the upper wiring line trench.