公开(公告)号：US09904491B2

公开(公告)日：2018-02-27

申请号：US14956457

申请日：2015-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Uk Kim ,  Jin-Ho Yi

IPC: G11C29/00 ,  G06F3/06 ,  G06F11/10 ,  G11C29/04

CPC classification number: G06F3/0679 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F11/1048 ,  G11C2029/0411

Abstract: Provided are a memory device, a memory system, and a method of operating the memory device. A method of operating a memory device including a plurality of random access memory (RAM) chips includes inputting a read command, reading a plurality of pieces of block data including first block data corresponding to the read command from each of the plurality of RAM chips, generating two-dimensional (2D) data by combining the plurality of pieces of block data read from each of the RAM chips, and processing the read command by using the 2D data.