公开(公告)号：US11561914B2

公开(公告)日：2023-01-24

申请号：US17071411

申请日：2020-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseok Cha ,  Sarath Kumar Kunnumpurathu Sivan ,  Jungsoo Ryoo

IPC: G06F13/24 ,  G06F3/06

Abstract: An interrupt generation method of a storage device includes executing a command provided by a host, writing a completion entry in a completion queue of the host upon completing execution of the command, and issuing an interrupt corresponding to the completion entry to the host in response to at least one of a first interrupt generation condition, a second interrupt generation condition, and a third interrupt generation condition being satisfied. The first interrupt generation condition is satisfied when a difference between a tail pointer and a head pointer of the completion queue is equal to a first mismatch value. The second interrupt generation condition is satisfied when the difference between the tail pointer and the head pointer is at least equal to an aggregation threshold. The third interrupt generation condition is satisfied when an amount of time that has elapsed since a previous interrupt was issued exceeds a reference time.