公开(公告)号：US20130214250A1

公开(公告)日：2013-08-22

申请号：US13848046

申请日：2013-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je Won KIM ,  Jeong Tak OH ,  Dong Joon KIM ,  Sun Woon KIM ,  Jin Sub PARK ,  Kyu Han LEE

IPC: H01L33/04

CPC classification number: H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-31 AN (where 0

Abstract translation: 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x InIn 1 Ga（1-x1-y1）N（其中0≤x1≤1,0≤y1≤1,0≤x1+ y1）形成的n型覆盖层 @ 1），由在n型覆盖层上形成的未掺杂的InAGa1-31A AN（其中0