公开(公告)号：US20180337307A1

公开(公告)日：2018-11-22

申请号：US15842000

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Taek HAN ,  Jong Sun MAENG ,  Jeen Seok CHO ,  Sun Woon KIM ,  Yong Hee JEONG

IPC: H01L33/32 ,  H01L33/12

Abstract: A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms/cm3) of each of the first layer and the third layer is greater than an oxygen concentration (atoms/cm3) of the second layer.

公开(公告)号：US20130214250A1

公开(公告)日：2013-08-22

申请号：US13848046

申请日：2013-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je Won KIM ,  Jeong Tak OH ,  Dong Joon KIM ,  Sun Woon KIM ,  Jin Sub PARK ,  Kyu Han LEE

IPC: H01L33/04

CPC classification number: H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-31 AN (where 0

Abstract translation: 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x InIn 1 Ga（1-x1-y1）N（其中0≤x1≤1,0≤y1≤1,0≤x1+ y1）形成的n型覆盖层 @ 1），由在n型覆盖层上形成的未掺杂的InAGa1-31A AN（其中0