公开(公告)号：US20190284701A1

公开(公告)日：2019-09-19

申请号：US16139506

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojin KIM ,  Hyo-Sun LEE ,  Jung-Min OH ,  Hyosan LEE ,  Donghyun KIM ,  Haksoo KIM ,  Jung Jae OH ,  Myung Ho LEE

IPC: C23C22/48 ,  C09K13/08 ,  C09K13/06 ,  H01L21/3213 ,  H01L21/02

Abstract: A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R—Si(R1)n(OR2)3-n in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, R1 is hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, R2 is hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of R1 may be further substituted with at least one substituent selected from halogen, hydroxyl, —N(R11)(R12), and —S(R13), where each of the R11, the R12 and the R13 is independently hydrogen or (C1-C20)alkyl.