公开(公告)号：US20190284701A1

公开(公告)日：2019-09-19

申请号：US16139506

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojin KIM ,  Hyo-Sun LEE ,  Jung-Min OH ,  Hyosan LEE ,  Donghyun KIM ,  Haksoo KIM ,  Jung Jae OH ,  Myung Ho LEE

IPC: C23C22/48 ,  C09K13/08 ,  C09K13/06 ,  H01L21/3213 ,  H01L21/02

Abstract: A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R—Si(R1)n(OR2)3-n in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, R1 is hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, R2 is hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of R1 may be further substituted with at least one substituent selected from halogen, hydroxyl, —N(R11)(R12), and —S(R13), where each of the R11, the R12 and the R13 is independently hydrogen or (C1-C20)alkyl.

公开(公告)号：US20190198315A1

公开(公告)日：2019-06-27

申请号：US16265709

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoyoung KIM ,  Hyo-Sun LEE ,  Soojin KIM ,  Keonyoung KIM ,  JINHYE BAE ,  HOON HAN ,  Tae Soo KWON ,  Jung Hun LIM

IPC: H01L21/02 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  H01L21/683 ,  H01L23/00 ,  C11D11/00

CPC classification number: H01L21/02068 ,  C11D7/08 ,  C11D7/261 ,  C11D7/264 ,  C11D7/266 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1181 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2924/37001 ,  H01L2224/11 ,  H01L2224/03

Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.