公开(公告)号：US20250079154A1

公开(公告)日：2025-03-06

申请号：US18652323

申请日：2024-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyoung Kim ,  Dohyun Kim ,  Sechan Kim ,  Kijong Park ,  Yuri Park ,  Sunjoong Song ,  Eunjin Song ,  Seungmin Shin ,  Seungcheol Chae ,  Sangjoon Park ,  Hyunjin Jang

IPC: H01L21/02 ,  H01L21/311

Abstract: A method of manufacturing an integrated circuit device includes forming a hafnium oxide film on a substrate and partially etching the hafnium oxide film. Partially etching the hafnium oxide film includes performing a dry treatment that changes components of a surface region that extends from an exposed surface of the hafnium oxide film into the hafnium oxide film by as much as a predetermined thickness by isotropically exposing the hafnium oxide film to a gas mixture that includes a halogen element-containing gas and a catalytic gas that includes hydrogen atoms in an atmosphere in which no plasma is applied onto the substrate, performing a wet treatment with an acidic solution that at least partially removes the component-changed surface region from the hafnium oxide film, and repeating a sequence of the dry treatment and the wet treatment.