METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20250079154A1

    公开(公告)日:2025-03-06

    申请号:US18652323

    申请日:2024-05-01

    Abstract: A method of manufacturing an integrated circuit device includes forming a hafnium oxide film on a substrate and partially etching the hafnium oxide film. Partially etching the hafnium oxide film includes performing a dry treatment that changes components of a surface region that extends from an exposed surface of the hafnium oxide film into the hafnium oxide film by as much as a predetermined thickness by isotropically exposing the hafnium oxide film to a gas mixture that includes a halogen element-containing gas and a catalytic gas that includes hydrogen atoms in an atmosphere in which no plasma is applied onto the substrate, performing a wet treatment with an acidic solution that at least partially removes the component-changed surface region from the hafnium oxide film, and repeating a sequence of the dry treatment and the wet treatment.

    Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same

    公开(公告)号:US12217793B2

    公开(公告)日:2025-02-04

    申请号:US17852035

    申请日:2022-06-28

    Abstract: A data transfer circuit in a nonvolatile memory device includes first repeaters, second repeaters and signal lines. The signal lines connect the first repeaters and the second repeaters, and include a first group of signal lines and a second group of signal lines alternatingly arranged. The first repeaters include a first group of repeaters activated in a first operation mode and a second group of repeaters activated in a second operation mode. The second repeaters include a third group of repeaters activated in the first operation mode and are connected to the first group of repeaters through the first group of signal lines floated in the second operation mode, and a fourth group of repeaters activated in the second operation mode and are connected to the second group of repeaters through the second group of signal lines floated in the first operation mode.

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