公开(公告)号：US20140014815A1

公开(公告)日：2014-01-16

申请号：US13837501

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeok-jong LEE ,  Yun-jung KIM ,  Jin-uk JEON ,  Ji-min CHEON ,  Jin-ho SEO ,  Seog-heon HAM

IPC: H03K4/02 ,  H04N5/376

CPC classification number: H03K4/026 ,  H04N5/3765 ,  H04N5/378

Abstract: A ramp signal generator includes: a row decoder which receives a row control signal from a timing controller and generates one or more row select signals, a first column decoder which receives a first column control signal from the timing controller and generates one or more first column select signals, a second column decoder which receives a second column control signal from the timing controller and generates one or more second column select signals, and a current cell array which is activated by the one or more first column select signals, the one or more second column select signals, and the one or more row select signals, and includes at least one current cell which generates at least one unit current, and generates an output current by summing the generated at least one unit current.

Abstract translation: 斜坡信号发生器包括：行解码器，其从定时控制器接收行控制信号并产生一个或多个行选择信号;第一列解码器，其从定时控制器接收第一列控制信号，并产生一个或多个第一列 选择信号，第二列解码器，其从定时控制器接收第二列控制信号并产生一个或多个第二列选择信号，以及由一个或多个第一列选择信号激活的当前单元阵列，所述一个或多个 第二列选择信号和一个或多个行选择信号，并且包括生成至少一个单位电流的至少一个当前单元，并且通过对所生成的至少一个单位电流求和来产生输出电流。

公开(公告)号：US20140357035A1

公开(公告)日：2014-12-04

申请号：US14460081

申请日：2014-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shigenobu MAEDA ,  Hyun-pil NOH ,  Choong-ho LEE ,  Seog-heon HAM

IPC: H01L21/8236 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract translation: 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。