公开(公告)号：US20240243117A1

公开(公告)日：2024-07-18

申请号：US18412177

申请日：2024-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongeun Cho ,  Eunhee Choi ,  Kibum Kim ,  Seonkyeong Kim ,  Hayoung Kim ,  Hyunjeong Roh ,  Moogyu Bae

IPC: H01L27/02 ,  H01L23/528 ,  H01L27/092

CPC classification number: H01L27/0207 ,  H01L23/5286 ,  H01L27/0928 ,  H01L27/0924

Abstract: An integrated circuit includes a first region having a plurality of first cells arranged in first rows extending in a first direction and a plurality of first gate electrodes extending in a second direction that crosses the first direction, a second region having a plurality of second cells arranged in second rows extending in the first direction and a plurality of second gate electrodes extending in the second direction, and a third region between the first region and the second region and having a plurality of third gate electrodes extending in the second direction. A second height of each of the second rows is greater than a first height of each of the first rows. A pitch of the first gate electrodes, a pitch of the second gate electrodes, and a pitch of the third gate electrodes are the same.