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公开(公告)号:US20220157381A1
公开(公告)日:2022-05-19
申请号:US17483088
申请日:2021-09-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minseok KIM , Joonsuc JANG , Hyunggon KIM , Seonyong LEE
Abstract: A method of operating a memory device, the method including: performing a first program operation to form a plurality of first threshold voltage distributions; and performing a second program operation by using a coarse verification voltage and a fine verification voltage based on offset information to form a plurality of second threshold voltage distributions respectively corresponding to a plurality of program states from the plurality of first threshold voltage distributions, wherein the offset information includes a plurality of offsets that vary according to characteristics of the second threshold voltage distributions.