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公开(公告)号：US12224163B2
公开(公告)日：2025-02-11
申请号：US18234123
申请日：2023-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SeungWan Yoo , Jeongyeon Lee , Dohyung Kim , Jaehong Park , Dong-Chan Lim
Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.
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