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    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
    3.
    发明公开
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230422523A1

    公开(公告)日：2023-12-28

    申请号：US18180366

    申请日：2023-03-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jiwon Kim ,  Dohyung Kim ,  Jiyoung Kim ,  Sukkang Sung

    IPC: H10B80/00 ,  H10B43/27

    CPC classification number: H10B80/00 ,  H10B43/27

    Abstract: A three-dimensional semiconductor memory device includes a first substrate, a peripheral circuit structure on the first substrate, and a cell array structure on the peripheral circuit structure. The cell array structure includes a stacked structure including gate electrodes extending in a first direction, a source structure on the stacked structure, and a second substrate in contact with the source structure. The source structure includes a first source conductive pattern between the second substrate and the stacked structure and a second source conductive pattern on the first source conductive pattern. The second source conductive pattern includes a first source part between the first source conductive pattern and the second substrate, a source connection part passing through the second substrate and extending in the first direction, and a second source part on the second substrate and connected to the first source part through the source connection part.

    CLOCK GENERATOR FOR REDUCING POWER AND SYSTEM ON CHIP INCLUDING THE SAME
    6.
    发明申请
    CLOCK GENERATOR FOR REDUCING POWER AND SYSTEM ON CHIP INCLUDING THE SAME 有权

    公开(公告)号：US20220147096A1

    公开(公告)日：2022-05-12

    申请号：US17470535

    申请日：2021-09-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dohyung Kim ,  Minyoung Kang

    IPC: G06F1/08 ,  G06F1/10 ,  G06F15/78

    Abstract: A system on chip includes: a functional circuit configured to perform a processing operation by receiving a supply voltage; a droop detection circuit configured to monitor the supply voltage and generate a detection signal indicating whether a droop of the supply voltage has occurred; a clock generation circuit configured to output a first clock signal having a first frequency; and a clock modulation circuit configured to receive the detection signal and the first clock signal, and provide a system clock signal to the functional circuit.

    Image display device and method of operating the same
    7.
    发明授权
    Image display device and method of operating the same 有权

    公开(公告)号：US11183148B2

    公开(公告)日：2021-11-23

    申请号：US16662290

    申请日：2019-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yongmin Tai ,  Dohyung Kim ,  Jinsung Kang ,  Kyuheon Lee ,  Sunghwan Jang

    IPC: G09G5/10

    Abstract: Provided are an image display device and a method of operating the same. The image display device includes a backlight unit configured to emit light towards a display panel. The image display device includes an illuminance sensor configured to obtain illuminance information associated with an area that is external to the image display device. The image display device includes a memory configured to store one or more instructions, and a processor configured to execute the one or more instructions stored in the memory to identify a plurality of backlight control patterns, select a backlight control pattern based on the illuminance information, identify brightness information of a current frame, and adjust the brightness of the backlight unit based on the selected backlight control pattern and the brightness information of the current frame.

    SENSOR DEVICE AND SYSTEM USING THE SAME
    8.
    发明申请
    SENSOR DEVICE AND SYSTEM USING THE SAME 有权

    公开(公告)号：US20250069846A1

    公开(公告)日：2025-02-27

    申请号：US18584633

    申请日：2024-02-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Solhee IN ,  Dohyung Kim ,  Sungsoo Kim ,  Jaesup Lee ,  Byungwook Jung

    IPC: H01J37/244 ,  H01J37/32 ,  H02J50/20 ,  H02J50/40 ,  H02J50/90

    Abstract: A system includes a radio frequency (RF) device outputting an RF signal; and at least one sensor device generating a power supply voltage using the RF signal output from the RF device, and operating by the power supply voltage, wherein the sensor device includes a case; a plurality of detectors disposed in the case, and collecting environmental data of a space in which the RF device and the sensor device are input, to generate detection data; a battery supplying a power supply voltage necessary for operation of the plurality of detectors; and a charger charging the battery, wherein the charger includes an antenna installed in the case and receiving RF power from an external source, an RF-DC converter converting an alternating current voltage corresponding to the RF power into a direct current voltage, a matching circuit connected between the antenna and the RF-DC converter, and a DC-DC converter adjusting a level of the direct current voltage and charging the battery.

    Semiconductor manufacturing apparatus and operating method thereof
    9.
    发明授权
    Semiconductor manufacturing apparatus and operating method thereof 有权

    公开(公告)号：US12185450B2

    公开(公告)日：2024-12-31

    申请号：US18628152

    申请日：2024-04-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dohyung Kim ,  Seongchul Hong ,  Insung Kim ,  Jinhong Park ,  Jungchul Lee

    IPC: H05G2/00 ,  G03F7/00 ,  H01L21/268

    Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME
    10.
    发明公开
    METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240176230A1

    公开(公告)日：2024-05-30

    申请号：US18462796

    申请日：2023-09-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hachul Shin ,  Dohyung Kim ,  Jooon Park ,  Sanghwan Lee ,  Seongchul Hong

    IPC: G03F1/70

    CPC classification number: G03F1/70

    Abstract: There is provided an extreme ultraviolet (EUV) overlay correcting method capable of effectively correcting an overlay error in an EUV exposure process and a method of manufacturing a semiconductor device including the same. The EUV overlay correcting method includes forming a first photoresist (PR) pattern on a wafer by performing an EUV exposure process using a reticle, inspecting an EUV overlay for the first PR pattern and obtaining a first overlay for a first overlay parameter in which an overlay three-dimensionally increases away from a center to opposing sides of the first PR pattern in a first direction perpendicular to a scan direction, calculating deformation data of the reticle based on the first overlay, applying a voltage to a clamp electrode of a reticle stage to create the reticle into a deformed reticle, and forming a second PR pattern on the wafer by performing an EUV exposure process using the deformed reticle.

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