公开(公告)号：US12112948B2

公开(公告)日：2024-10-08

申请号：US16996372

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Soyeon Yoo ,  Sooyoung Choi ,  Tsunehiro Nishi ,  Kwangsub Yoon ,  Brian Cardineau ,  Kumagai Tomoya

IPC: G03F7/38 ,  G03F7/004 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F7/0042 ,  G03F7/38

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

公开(公告)号：US20220059345A1

公开(公告)日：2022-02-24

申请号：US16996372

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Soyeon Yoo ,  Sooyoung Choi ,  Tsunehiro Nishi ,  Kwangsub Yoon ,  Brian Cardineau ,  Kumagai Tomoya

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/38

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.