公开(公告)号：US12112948B2

公开(公告)日：2024-10-08

申请号：US16996372

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Soyeon Yoo ,  Sooyoung Choi ,  Tsunehiro Nishi ,  Kwangsub Yoon ,  Brian Cardineau ,  Kumagai Tomoya

IPC: G03F7/38 ,  G03F7/004 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F7/0042 ,  G03F7/38

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

公开(公告)号：US11599021B2

公开(公告)日：2023-03-07

申请号：US17736132

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： Chawon Koh ,  Tsunehiro Nishi ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  Soo Young Choi

IPC: G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US20200348594A1

公开(公告)日：2020-11-05

申请号：US16399473

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： CHAWON KOH ,  TSUNEHIRO NISHI ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  SOO YOUNG CHOI

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  H01L21/311

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US11327398B2

公开(公告)日：2022-05-10

申请号：US16399473

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： Chawon Koh ,  Tsunehiro Nishi ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  Soo Young Choi

IPC: G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US20220059345A1

公开(公告)日：2022-02-24

申请号：US16996372

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Soyeon Yoo ,  Sooyoung Choi ,  Tsunehiro Nishi ,  Kwangsub Yoon ,  Brian Cardineau ,  Kumagai Tomoya

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/38

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.